Indium fluctuations analysis inside InGaN quantum wells by scanning transmission electron microsocopy

A. M. Sanchez; M. Gass; A. J. Papworth; P. Ruterana; H. K. Cho; P. J. Goodhew

Indium fluctuations analysis inside InGaN quantum wells by scanning transmission electron microsocopy

A. M. Sanchez
, M. Gass
, A. J. Papworth
, P. Ruterana
, H. K. Cho
, P. J. Goodhew

University of Liverpool
Inst. Sci. la Matiere et du Rayonn.
Dong-A University

Research output: Contribution to journal › Conference article › peer-review

Abstract

Energy Dispersive X-Ray and Parallel Electron Energy Loss Spectroscopy analyses have been carried out to determine the indium composition fluctuations in InGaN/GaN quantum wells grown by Metal Organic Chemical Vapor Deposition. Information about the chemical composition and indium segregation in the InGaN/GaN system has been obtained. The compositional distribution is not homogeneous along the quantum wells, and indium rich clusters are observed inside the quantum wells.

Original language	English
Pages (from-to)	131-134
Number of pages	4
Journal	Institute of Physics Conference Series
Volume	179
State	Published - 2004
Externally published	Yes
Event	Electron Microscopy and Analysis 2003 - Proceedings of the Institute of Physics Electron Microscopy and Analysis Group Conference - Oxford, United Kingdom Duration: 3 Sep 2003 → 5 Sep 2003

Cite this

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title = "Indium fluctuations analysis inside InGaN quantum wells by scanning transmission electron microsocopy",

abstract = "Energy Dispersive X-Ray and Parallel Electron Energy Loss Spectroscopy analyses have been carried out to determine the indium composition fluctuations in InGaN/GaN quantum wells grown by Metal Organic Chemical Vapor Deposition. Information about the chemical composition and indium segregation in the InGaN/GaN system has been obtained. The compositional distribution is not homogeneous along the quantum wells, and indium rich clusters are observed inside the quantum wells.",

author = "Sanchez, \{A. M.\} and M. Gass and Papworth, \{A. J.\} and P. Ruterana and Cho, \{H. K.\} and Goodhew, \{P. J.\}",

year = "2004",

language = "English",

volume = "179",

pages = "131--134",

journal = "Institute of Physics Conference Series",

issn = "0951-3248",

publisher = "IOP Publishing Ltd.",

note = "Electron Microscopy and Analysis 2003 - Proceedings of the Institute of Physics Electron Microscopy and Analysis Group Conference ; Conference date: 03-09-2003 Through 05-09-2003",

}

TY - JOUR

T1 - Indium fluctuations analysis inside InGaN quantum wells by scanning transmission electron microsocopy

AU - Sanchez, A. M.

AU - Gass, M.

AU - Papworth, A. J.

AU - Ruterana, P.

AU - Cho, H. K.

AU - Goodhew, P. J.

PY - 2004

Y1 - 2004

N2 - Energy Dispersive X-Ray and Parallel Electron Energy Loss Spectroscopy analyses have been carried out to determine the indium composition fluctuations in InGaN/GaN quantum wells grown by Metal Organic Chemical Vapor Deposition. Information about the chemical composition and indium segregation in the InGaN/GaN system has been obtained. The compositional distribution is not homogeneous along the quantum wells, and indium rich clusters are observed inside the quantum wells.

AB - Energy Dispersive X-Ray and Parallel Electron Energy Loss Spectroscopy analyses have been carried out to determine the indium composition fluctuations in InGaN/GaN quantum wells grown by Metal Organic Chemical Vapor Deposition. Information about the chemical composition and indium segregation in the InGaN/GaN system has been obtained. The compositional distribution is not homogeneous along the quantum wells, and indium rich clusters are observed inside the quantum wells.

UR - https://www.scopus.com/pages/publications/5044240202

M3 - Conference article

AN - SCOPUS:5044240202

SN - 0951-3248

VL - 179

SP - 131

EP - 134

JO - Institute of Physics Conference Series

JF - Institute of Physics Conference Series

T2 - Electron Microscopy and Analysis 2003 - Proceedings of the Institute of Physics Electron Microscopy and Analysis Group Conference

Y2 - 3 September 2003 through 5 September 2003

ER -

Indium fluctuations analysis inside InGaN quantum wells by scanning transmission electron microsocopy

Abstract

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