Abstract
Energy Dispersive X-Ray and Parallel Electron Energy Loss Spectroscopy analyses have been carried out to determine the indium composition fluctuations in InGaN/GaN quantum wells grown by Metal Organic Chemical Vapor Deposition. Information about the chemical composition and indium segregation in the InGaN/GaN system has been obtained. The compositional distribution is not homogeneous along the quantum wells, and indium rich clusters are observed inside the quantum wells.
| Original language | English |
|---|---|
| Pages (from-to) | 131-134 |
| Number of pages | 4 |
| Journal | Institute of Physics Conference Series |
| Volume | 179 |
| State | Published - 2004 |
| Externally published | Yes |
| Event | Electron Microscopy and Analysis 2003 - Proceedings of the Institute of Physics Electron Microscopy and Analysis Group Conference - Oxford, United Kingdom Duration: 3 Sep 2003 → 5 Sep 2003 |