In situ study of the formation of SiC thin films on Si(111) surfaces with 1,3-disilabutane: Adsorption properties and initial deposition characteristics

H. G. Yoon; J. H. Boo; W. L. Liu; S. B. Lee; S. C. Park; H. Kang; Y. Kim

doi:10.1116/1.582470

In situ study of the formation of SiC thin films on Si(111) surfaces with 1,3-disilabutane: Adsorption properties and initial deposition characteristics

H. G. Yoon, J. H. Boo, W. L. Liu, S. B. Lee, S. C. Park, H. Kang, Y. Kim

Department of Chemistry

Research output: Contribution to journal › Conference article › peer-review

11 Scopus citations

Abstract

The low-energy Cs⁺ reactive scattering and X-ray photoelectron spectroscopy was used in studying the initial formation of silicon carbide by the interaction of 1,3-disilabutane (DSB) with the Si(111) surface. The combination of these two methods was used to identify qualitatively the adspecies in the intermediate states during decomposition of DSB and to characterized the binding energies and full width at half maximum (FWHM) of their possible peaks. The results of the intensity variations of Si(2p) and total C(1s) peaks and analysis by curve fitting of C(1s) peaks suggest that one C₂H₈Si₂ adspecies makes only one Ch₄Si adspecies by breakage of the central C-Si bond rather than two adspecies.

Original language	English
Pages (from-to)	1464-1468
Number of pages	5
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	18
Issue number	4 I
DOIs	https://doi.org/10.1116/1.582470
State	Published - Jul 2000
Event	46th National Symposium of the American Vacuum Society - Seatlle, WA, USA Duration: 25 Oct 1999 → 29 Oct 1999

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@article{c41a22bad0344503a3c2eb260e55b41b,

title = "In situ study of the formation of SiC thin films on Si(111) surfaces with 1,3-disilabutane: Adsorption properties and initial deposition characteristics",

abstract = "The low-energy Cs+ reactive scattering and X-ray photoelectron spectroscopy was used in studying the initial formation of silicon carbide by the interaction of 1,3-disilabutane (DSB) with the Si(111) surface. The combination of these two methods was used to identify qualitatively the adspecies in the intermediate states during decomposition of DSB and to characterized the binding energies and full width at half maximum (FWHM) of their possible peaks. The results of the intensity variations of Si(2p) and total C(1s) peaks and analysis by curve fitting of C(1s) peaks suggest that one C2H8Si2 adspecies makes only one Ch4Si adspecies by breakage of the central C-Si bond rather than two adspecies.",

author = "Yoon, \{H. G.\} and Boo, \{J. H.\} and Liu, \{W. L.\} and Lee, \{S. B.\} and Park, \{S. C.\} and H. Kang and Y. Kim",

year = "2000",

month = jul,

doi = "10.1116/1.582470",

language = "English",

volume = "18",

pages = "1464--1468",

journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films",

issn = "0734-2101",

publisher = "AVS Science and Technology Society",

number = "4 I",

note = "46th National Symposium of the American Vacuum Society ; Conference date: 25-10-1999 Through 29-10-1999",

}

In situ study of the formation of SiC thin films on Si(111) surfaces with 1,3-disilabutane: Adsorption properties and initial deposition characteristics. / Yoon, H. G.; Boo, J. H.; Liu, W. L. et al.
In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 18, No. 4 I, 07.2000, p. 1464-1468.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - In situ study of the formation of SiC thin films on Si(111) surfaces with 1,3-disilabutane

T2 - 46th National Symposium of the American Vacuum Society

AU - Yoon, H. G.

AU - Boo, J. H.

AU - Liu, W. L.

AU - Lee, S. B.

AU - Park, S. C.

AU - Kang, H.

AU - Kim, Y.

PY - 2000/7

Y1 - 2000/7

N2 - The low-energy Cs+ reactive scattering and X-ray photoelectron spectroscopy was used in studying the initial formation of silicon carbide by the interaction of 1,3-disilabutane (DSB) with the Si(111) surface. The combination of these two methods was used to identify qualitatively the adspecies in the intermediate states during decomposition of DSB and to characterized the binding energies and full width at half maximum (FWHM) of their possible peaks. The results of the intensity variations of Si(2p) and total C(1s) peaks and analysis by curve fitting of C(1s) peaks suggest that one C2H8Si2 adspecies makes only one Ch4Si adspecies by breakage of the central C-Si bond rather than two adspecies.

AB - The low-energy Cs+ reactive scattering and X-ray photoelectron spectroscopy was used in studying the initial formation of silicon carbide by the interaction of 1,3-disilabutane (DSB) with the Si(111) surface. The combination of these two methods was used to identify qualitatively the adspecies in the intermediate states during decomposition of DSB and to characterized the binding energies and full width at half maximum (FWHM) of their possible peaks. The results of the intensity variations of Si(2p) and total C(1s) peaks and analysis by curve fitting of C(1s) peaks suggest that one C2H8Si2 adspecies makes only one Ch4Si adspecies by breakage of the central C-Si bond rather than two adspecies.

UR - https://www.scopus.com/pages/publications/0034228021

U2 - 10.1116/1.582470

DO - 10.1116/1.582470

M3 - Conference article

AN - SCOPUS:0034228021

SN - 0734-2101

VL - 18

SP - 1464

EP - 1468

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 4 I

Y2 - 25 October 1999 through 29 October 1999

ER -

In situ study of the formation of SiC thin films on Si(111) surfaces with 1,3-disilabutane: Adsorption properties and initial deposition characteristics

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