In situ observation of electron beam irradiation effects in oxidized polycrystalline Si1-xGex films

Han Byul Kang; Jee Hwan Bae; Kyung Hwan Kwak; Jae Wook Lee; Min Ho Park; Dae Hong Ko; Cheol Woong Yang

doi:10.1016/j.tsf.2007.08.081

In situ observation of electron beam irradiation effects in oxidized polycrystalline Si_1-xGe_x films

Han Byul Kang
, Jee Hwan Bae
, Kyung Hwan Kwak
, Jae Wook Lee
, Min Ho Park
, Dae Hong Ko
, Cheol Woong Yang

Department of Advanced Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

This study examined the morphological and compositional changes that occur in oxidized poly-Si_1-xGe_x film during electron-beam irradiation in a transmission electron microscope. Before irradiation, the oxide layer was composed of a mixture of SiO₂ and GeO₂ phases. However, during electron-beam irradiation, there were significant changes in the microstructure and elemental distribution. For the oxidized poly-Si_0.6Ge_0.4 films, the agglomeration of GeO₂ was observed at the surface region. On the other hand, in the case of the oxidized poly-Si_0.4Ge_0.6 films, the crystallization of GeO₂ occurred in the oxide layer. Ge lattice fringes and twinning were also observed in the oxide layer.

Original language	English
Pages (from-to)	3486-3492
Number of pages	7
Journal	Thin Solid Films
Volume	516
Issue number	11
DOIs	https://doi.org/10.1016/j.tsf.2007.08.081
State	Published - 1 Apr 2008

Keywords

Irradiation
Oxidation
SiGe
TEM

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10.1016/j.tsf.2007.08.081

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title = "In situ observation of electron beam irradiation effects in oxidized polycrystalline Si1-xGex films",

abstract = "This study examined the morphological and compositional changes that occur in oxidized poly-Si1-xGex film during electron-beam irradiation in a transmission electron microscope. Before irradiation, the oxide layer was composed of a mixture of SiO2 and GeO2 phases. However, during electron-beam irradiation, there were significant changes in the microstructure and elemental distribution. For the oxidized poly-Si0.6Ge0.4 films, the agglomeration of GeO2 was observed at the surface region. On the other hand, in the case of the oxidized poly-Si0.4Ge0.6 films, the crystallization of GeO2 occurred in the oxide layer. Ge lattice fringes and twinning were also observed in the oxide layer.",

keywords = "Irradiation, Oxidation, SiGe, TEM",

author = "Kang, \{Han Byul\} and Bae, \{Jee Hwan\} and Kwak, \{Kyung Hwan\} and Lee, \{Jae Wook\} and Park, \{Min Ho\} and Ko, \{Dae Hong\} and Yang, \{Cheol Woong\}",

year = "2008",

month = apr,

day = "1",

doi = "10.1016/j.tsf.2007.08.081",

language = "English",

volume = "516",

pages = "3486--3492",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

number = "11",

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TY - JOUR

T1 - In situ observation of electron beam irradiation effects in oxidized polycrystalline Si1-xGex films

AU - Kang, Han Byul

AU - Bae, Jee Hwan

AU - Kwak, Kyung Hwan

AU - Lee, Jae Wook

AU - Park, Min Ho

AU - Ko, Dae Hong

AU - Yang, Cheol Woong

PY - 2008/4/1

Y1 - 2008/4/1

N2 - This study examined the morphological and compositional changes that occur in oxidized poly-Si1-xGex film during electron-beam irradiation in a transmission electron microscope. Before irradiation, the oxide layer was composed of a mixture of SiO2 and GeO2 phases. However, during electron-beam irradiation, there were significant changes in the microstructure and elemental distribution. For the oxidized poly-Si0.6Ge0.4 films, the agglomeration of GeO2 was observed at the surface region. On the other hand, in the case of the oxidized poly-Si0.4Ge0.6 films, the crystallization of GeO2 occurred in the oxide layer. Ge lattice fringes and twinning were also observed in the oxide layer.

AB - This study examined the morphological and compositional changes that occur in oxidized poly-Si1-xGex film during electron-beam irradiation in a transmission electron microscope. Before irradiation, the oxide layer was composed of a mixture of SiO2 and GeO2 phases. However, during electron-beam irradiation, there were significant changes in the microstructure and elemental distribution. For the oxidized poly-Si0.6Ge0.4 films, the agglomeration of GeO2 was observed at the surface region. On the other hand, in the case of the oxidized poly-Si0.4Ge0.6 films, the crystallization of GeO2 occurred in the oxide layer. Ge lattice fringes and twinning were also observed in the oxide layer.

KW - Irradiation

KW - Oxidation

KW - SiGe

KW - TEM

UR - https://www.scopus.com/pages/publications/40649110522

U2 - 10.1016/j.tsf.2007.08.081

DO - 10.1016/j.tsf.2007.08.081

M3 - Article

AN - SCOPUS:40649110522

SN - 0040-6090

VL - 516

SP - 3486

EP - 3492

JO - Thin Solid Films

JF - Thin Solid Films

IS - 11

ER -

In situ observation of electron beam irradiation effects in oxidized polycrystalline Si_1-xGe_x films

Abstract

Keywords

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