In-situ Monitoring Hydrodynamic Pressure Distribution during Chemical Mechanical Polishing

Eungchul Kim; Gunhoo Woo; Taesung Kim

doi:10.1109/METROI4.2019.8792840

In-situ Monitoring Hydrodynamic Pressure Distribution during Chemical Mechanical Polishing

Eungchul Kim, Gunhoo Woo, Taesung Kim

Department of Mechanical Engineering

Sungkyunkwan University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

The hydrodynamic pressure distribution on the wafer surface in the chemical mechanical polishing process is evaluated with a various condition such as load pressure, flow rate, and slurry viscosity. To measure the hydrodynamic pressure in-situ process, a new head fixture was fabricated and Zigbee wireless communication is adopted, which can make it enable to interconnect between many sensors and monitoring PC. Finally, the measured results are compared with the non-uniformity of the polished wafer and modified Preston equation is suggested.

Original language	English
Title of host publication	2019 IEEE International Workshop on Metrology for Industry 4.0 and IoT, MetroInd 4.0 and IoT 2019 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	235-239
Number of pages	5
ISBN (Electronic)	9781728104294
DOIs	https://doi.org/10.1109/METROI4.2019.8792840
State	Published - Jun 2019
Event	2nd IEEE International Workshop on Metrology for Industry 4.0 and IoT, MetroInd 4.0 and IoT 2019 - Naples, Italy Duration: 4 Jun 2019 → 6 Jun 2019

Publication series

Name	2019 IEEE International Workshop on Metrology for Industry 4.0 and IoT, MetroInd 4.0 and IoT 2019 - Proceedings

Conference

Conference	2nd IEEE International Workshop on Metrology for Industry 4.0 and IoT, MetroInd 4.0 and IoT 2019
Country/Territory	Italy
City	Naples
Period	4/06/19 → 6/06/19

Keywords

Chemical mechanical polishing
Hydrodynamic pressure
in-situ monitoring
Wireless communication

Access to Document

10.1109/METROI4.2019.8792840

Cite this

Kim, E., Woo, G., & Kim, T. (2019). In-situ Monitoring Hydrodynamic Pressure Distribution during Chemical Mechanical Polishing. In 2019 IEEE International Workshop on Metrology for Industry 4.0 and IoT, MetroInd 4.0 and IoT 2019 - Proceedings (pp. 235-239). Article 8792840 (2019 IEEE International Workshop on Metrology for Industry 4.0 and IoT, MetroInd 4.0 and IoT 2019 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/METROI4.2019.8792840

Kim, Eungchul ; Woo, Gunhoo ; Kim, Taesung. / In-situ Monitoring Hydrodynamic Pressure Distribution during Chemical Mechanical Polishing. 2019 IEEE International Workshop on Metrology for Industry 4.0 and IoT, MetroInd 4.0 and IoT 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. pp. 235-239 (2019 IEEE International Workshop on Metrology for Industry 4.0 and IoT, MetroInd 4.0 and IoT 2019 - Proceedings).

@inproceedings{0732181aa15d471ebeba6ed925c56aee,

title = "In-situ Monitoring Hydrodynamic Pressure Distribution during Chemical Mechanical Polishing",

abstract = "The hydrodynamic pressure distribution on the wafer surface in the chemical mechanical polishing process is evaluated with a various condition such as load pressure, flow rate, and slurry viscosity. To measure the hydrodynamic pressure in-situ process, a new head fixture was fabricated and Zigbee wireless communication is adopted, which can make it enable to interconnect between many sensors and monitoring PC. Finally, the measured results are compared with the non-uniformity of the polished wafer and modified Preston equation is suggested.",

keywords = "Chemical mechanical polishing, Hydrodynamic pressure, in-situ monitoring, Wireless communication",

author = "Eungchul Kim and Gunhoo Woo and Taesung Kim",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 2nd IEEE International Workshop on Metrology for Industry 4.0 and IoT, MetroInd 4.0 and IoT 2019 ; Conference date: 04-06-2019 Through 06-06-2019",

year = "2019",

month = jun,

doi = "10.1109/METROI4.2019.8792840",

language = "English",

series = "2019 IEEE International Workshop on Metrology for Industry 4.0 and IoT, MetroInd 4.0 and IoT 2019 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "235--239",

booktitle = "2019 IEEE International Workshop on Metrology for Industry 4.0 and IoT, MetroInd 4.0 and IoT 2019 - Proceedings",

}

Kim, E, Woo, G & Kim, T 2019, In-situ Monitoring Hydrodynamic Pressure Distribution during Chemical Mechanical Polishing. in 2019 IEEE International Workshop on Metrology for Industry 4.0 and IoT, MetroInd 4.0 and IoT 2019 - Proceedings., 8792840, 2019 IEEE International Workshop on Metrology for Industry 4.0 and IoT, MetroInd 4.0 and IoT 2019 - Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 235-239, 2nd IEEE International Workshop on Metrology for Industry 4.0 and IoT, MetroInd 4.0 and IoT 2019, Naples, Italy, 4/06/19. https://doi.org/10.1109/METROI4.2019.8792840

In-situ Monitoring Hydrodynamic Pressure Distribution during Chemical Mechanical Polishing. / Kim, Eungchul; Woo, Gunhoo; Kim, Taesung.
2019 IEEE International Workshop on Metrology for Industry 4.0 and IoT, MetroInd 4.0 and IoT 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. p. 235-239 8792840 (2019 IEEE International Workshop on Metrology for Industry 4.0 and IoT, MetroInd 4.0 and IoT 2019 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - In-situ Monitoring Hydrodynamic Pressure Distribution during Chemical Mechanical Polishing

AU - Kim, Eungchul

AU - Woo, Gunhoo

AU - Kim, Taesung

PY - 2019/6

Y1 - 2019/6

N2 - The hydrodynamic pressure distribution on the wafer surface in the chemical mechanical polishing process is evaluated with a various condition such as load pressure, flow rate, and slurry viscosity. To measure the hydrodynamic pressure in-situ process, a new head fixture was fabricated and Zigbee wireless communication is adopted, which can make it enable to interconnect between many sensors and monitoring PC. Finally, the measured results are compared with the non-uniformity of the polished wafer and modified Preston equation is suggested.

AB - The hydrodynamic pressure distribution on the wafer surface in the chemical mechanical polishing process is evaluated with a various condition such as load pressure, flow rate, and slurry viscosity. To measure the hydrodynamic pressure in-situ process, a new head fixture was fabricated and Zigbee wireless communication is adopted, which can make it enable to interconnect between many sensors and monitoring PC. Finally, the measured results are compared with the non-uniformity of the polished wafer and modified Preston equation is suggested.

KW - Chemical mechanical polishing

KW - Hydrodynamic pressure

KW - in-situ monitoring

KW - Wireless communication

UR - https://www.scopus.com/pages/publications/85071592195

U2 - 10.1109/METROI4.2019.8792840

DO - 10.1109/METROI4.2019.8792840

M3 - Conference contribution

AN - SCOPUS:85071592195

T3 - 2019 IEEE International Workshop on Metrology for Industry 4.0 and IoT, MetroInd 4.0 and IoT 2019 - Proceedings

SP - 235

EP - 239

BT - 2019 IEEE International Workshop on Metrology for Industry 4.0 and IoT, MetroInd 4.0 and IoT 2019 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2nd IEEE International Workshop on Metrology for Industry 4.0 and IoT, MetroInd 4.0 and IoT 2019

Y2 - 4 June 2019 through 6 June 2019

ER -

Kim E, Woo G, Kim T. In-situ Monitoring Hydrodynamic Pressure Distribution during Chemical Mechanical Polishing. In 2019 IEEE International Workshop on Metrology for Industry 4.0 and IoT, MetroInd 4.0 and IoT 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2019. p. 235-239. 8792840. (2019 IEEE International Workshop on Metrology for Industry 4.0 and IoT, MetroInd 4.0 and IoT 2019 - Proceedings). doi: 10.1109/METROI4.2019.8792840

In-situ Monitoring Hydrodynamic Pressure Distribution during Chemical Mechanical Polishing

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