In-situ metallic oxide capping for high mobility solution-processed metal-oxide TFTs

Kyung Tae Kim; Jaekyun Kim; Yong Hoon Kim; Sung Kyu Park

doi:10.1109/LED.2014.2329955

In-situ metallic oxide capping for high mobility solution-processed metal-oxide TFTs

Kyung Tae Kim, Jaekyun Kim, Yong Hoon Kim, Sung Kyu Park

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

Transparent and highly conductive indium-zinc oxide (IZO) was utilized as a metallic capping layer in solution-processed indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) to enhance their electrical performance. By applying an in-situ metallic oxide (IZO) as a capping layer, which can be monolithically patterned with source/drain electrodes, the IGZO TFTs have shown enhanced mobility as high as ∼ 60 cm²/V-s, subthreshold slope of <0.1 V/decade, and threshold voltage of ∼1-2 V. We found that metallic capping layers having work function lower than that of the channel material can induce a significant reduction in series resistance and enhance the apparent field-effect mobility of the device.

Original language	English
Article number	6842619
Pages (from-to)	850-852
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	35
Issue number	8
DOIs	https://doi.org/10.1109/LED.2014.2329955
State	Published - Aug 2014
Externally published	Yes

Keywords

high mobility
indium-gallium-zinc oxide
Metallic capping layer
solution process
transparent capping

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10.1109/LED.2014.2329955

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title = "In-situ metallic oxide capping for high mobility solution-processed metal-oxide TFTs",

abstract = "Transparent and highly conductive indium-zinc oxide (IZO) was utilized as a metallic capping layer in solution-processed indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) to enhance their electrical performance. By applying an in-situ metallic oxide (IZO) as a capping layer, which can be monolithically patterned with source/drain electrodes, the IGZO TFTs have shown enhanced mobility as high as ∼ 60 cm2/V-s, subthreshold slope of <0.1 V/decade, and threshold voltage of ∼1-2 V. We found that metallic capping layers having work function lower than that of the channel material can induce a significant reduction in series resistance and enhance the apparent field-effect mobility of the device.",

keywords = "high mobility, indium-gallium-zinc oxide, Metallic capping layer, solution process, transparent capping",

author = "Kim, \{Kyung Tae\} and Jaekyun Kim and Kim, \{Yong Hoon\} and Park, \{Sung Kyu\}",

year = "2014",

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language = "English",

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AU - Kim, Kyung Tae

AU - Kim, Jaekyun

AU - Kim, Yong Hoon

AU - Park, Sung Kyu

PY - 2014/8

Y1 - 2014/8

N2 - Transparent and highly conductive indium-zinc oxide (IZO) was utilized as a metallic capping layer in solution-processed indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) to enhance their electrical performance. By applying an in-situ metallic oxide (IZO) as a capping layer, which can be monolithically patterned with source/drain electrodes, the IGZO TFTs have shown enhanced mobility as high as ∼ 60 cm2/V-s, subthreshold slope of <0.1 V/decade, and threshold voltage of ∼1-2 V. We found that metallic capping layers having work function lower than that of the channel material can induce a significant reduction in series resistance and enhance the apparent field-effect mobility of the device.

AB - Transparent and highly conductive indium-zinc oxide (IZO) was utilized as a metallic capping layer in solution-processed indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) to enhance their electrical performance. By applying an in-situ metallic oxide (IZO) as a capping layer, which can be monolithically patterned with source/drain electrodes, the IGZO TFTs have shown enhanced mobility as high as ∼ 60 cm2/V-s, subthreshold slope of <0.1 V/decade, and threshold voltage of ∼1-2 V. We found that metallic capping layers having work function lower than that of the channel material can induce a significant reduction in series resistance and enhance the apparent field-effect mobility of the device.

KW - high mobility

KW - indium-gallium-zinc oxide

KW - Metallic capping layer

KW - solution process

KW - transparent capping

UR - https://www.scopus.com/pages/publications/84905081469

U2 - 10.1109/LED.2014.2329955

DO - 10.1109/LED.2014.2329955

M3 - Article

AN - SCOPUS:84905081469

SN - 0741-3106

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

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ER -

In-situ metallic oxide capping for high mobility solution-processed metal-oxide TFTs

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Keywords

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