Improving BSIM Flicker Noise Model

Youngsoo Seo; Changbeom Woo; Myunghee Lee; Myounggon Kang; Jongwook Jeon; Hyungcheol Shin

doi:10.1109/EDTM.2019.8731123

Improving BSIM Flicker Noise Model

Youngsoo Seo
, Changbeom Woo
, Myunghee Lee
, Myounggon Kang
, Jongwook Jeon
, Hyungcheol Shin

Seoul National University
Dongbu HiTek co., Ltd.
Korea National University of Transportation
Konkuk University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

We modified BSIM flicker noise model and extracted the noise parameters as a function of gate bias. In the proposed model, three noise parameters (NOIA, NOIB and NOIC) were found to be proportional to the oxide trap density. The measured flicker noise of the MOSFET is compared with the existing model and the proposed model, and it is confirmed that the proposed model has higher accuracy.

Original language	English
Title of host publication	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	32-34
Number of pages	3
ISBN (Electronic)	9781538665084
DOIs	https://doi.org/10.1109/EDTM.2019.8731123
State	Published - Mar 2019
Externally published	Yes
Event	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 - Singapore, Singapore Duration: 12 Mar 2019 → 15 Mar 2019

Publication series

Name	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

Conference

Conference	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
Country/Territory	Singapore
City	Singapore
Period	12/03/19 → 15/03/19

Keywords

Carrier number fluctuation
Mobility fluctuation
NOIB
NOIC
Noise parameter NOIA
Oxide trap density
Unified flicker noise model

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10.1109/EDTM.2019.8731123

Cite this

Seo, Y., Woo, C., Lee, M., Kang, M., Jeon, J., & Shin, H. (2019). Improving BSIM Flicker Noise Model. In 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 (pp. 32-34). Article 8731123 (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2019.8731123

@inproceedings{b4e66180d17e43e8b43fda5766d74d62,

title = "Improving BSIM Flicker Noise Model",

abstract = "We modified BSIM flicker noise model and extracted the noise parameters as a function of gate bias. In the proposed model, three noise parameters (NOIA, NOIB and NOIC) were found to be proportional to the oxide trap density. The measured flicker noise of the MOSFET is compared with the existing model and the proposed model, and it is confirmed that the proposed model has higher accuracy.",

keywords = "Carrier number fluctuation, Mobility fluctuation, NOIB, NOIC, Noise parameter NOIA, Oxide trap density, Unified flicker noise model",

author = "Youngsoo Seo and Changbeom Woo and Myunghee Lee and Myounggon Kang and Jongwook Jeon and Hyungcheol Shin",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 ; Conference date: 12-03-2019 Through 15-03-2019",

year = "2019",

month = mar,

doi = "10.1109/EDTM.2019.8731123",

language = "English",

series = "2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "32--34",

booktitle = "2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019",

}

Seo, Y, Woo, C, Lee, M, Kang, M, Jeon, J & Shin, H 2019, Improving BSIM Flicker Noise Model. in 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019., 8731123, 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019, Institute of Electrical and Electronics Engineers Inc., pp. 32-34, 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019, Singapore, Singapore, 12/03/19. https://doi.org/10.1109/EDTM.2019.8731123

Improving BSIM Flicker Noise Model. / Seo, Youngsoo; Woo, Changbeom; Lee, Myunghee et al.
2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 32-34 8731123 (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Improving BSIM Flicker Noise Model

AU - Seo, Youngsoo

AU - Woo, Changbeom

AU - Lee, Myunghee

AU - Kang, Myounggon

AU - Jeon, Jongwook

AU - Shin, Hyungcheol

PY - 2019/3

Y1 - 2019/3

N2 - We modified BSIM flicker noise model and extracted the noise parameters as a function of gate bias. In the proposed model, three noise parameters (NOIA, NOIB and NOIC) were found to be proportional to the oxide trap density. The measured flicker noise of the MOSFET is compared with the existing model and the proposed model, and it is confirmed that the proposed model has higher accuracy.

AB - We modified BSIM flicker noise model and extracted the noise parameters as a function of gate bias. In the proposed model, three noise parameters (NOIA, NOIB and NOIC) were found to be proportional to the oxide trap density. The measured flicker noise of the MOSFET is compared with the existing model and the proposed model, and it is confirmed that the proposed model has higher accuracy.

KW - Carrier number fluctuation

KW - Mobility fluctuation

KW - NOIB

KW - NOIC

KW - Noise parameter NOIA

KW - Oxide trap density

KW - Unified flicker noise model

UR - https://www.scopus.com/pages/publications/85067801075

U2 - 10.1109/EDTM.2019.8731123

DO - 10.1109/EDTM.2019.8731123

M3 - Conference contribution

AN - SCOPUS:85067801075

T3 - 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

SP - 32

EP - 34

BT - 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

Y2 - 12 March 2019 through 15 March 2019

ER -

Improving BSIM Flicker Noise Model

Abstract

Publication series

Conference

Keywords

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