Improvement of the contact resistance between ITO and pentacene using various metal-oxide interlayers

Hyoungsub Kim; Sunyoung Sohn; Donggeun Jung; Wan Joo Maeng; Hyungjun Kim; Tae Sang Kim; Jungseok Hahn; Sangyun Lee; Yeonjin Yi; Mann Ho Cho

doi:10.1016/j.orgel.2008.08.008

Improvement of the contact resistance between ITO and pentacene using various metal-oxide interlayers

Hyoungsub Kim, Sunyoung Sohn, Donggeun Jung, Wan Joo Maeng, Hyungjun Kim, Tae Sang Kim, Jungseok Hahn, Sangyun Lee, Yeonjin Yi, Mann Ho Cho

Department of Advanced Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

Ultra-thin Al₂O₃, Ta₂O₅, and TiO₂ films were deposited on the indium tin oxide (ITO) surfaces in organic thin film transistors using the atomic layer deposition (ALD) process at room temperature, and the contact resistance was significantly improved with the increase of the dielectric constant of the interlayer. The electronic band diagrams of the pentacene/ITO structures after ALD treatment on ITO surface with various metal-oxides were measured using in situ ultra-violet photoelectron spectroscopy during the step-by-step deposition of pentacene, and these results explained the decrease of the hole injection barriers and the resulting improvement of the contact resistance between pentacene/ITO interface.

Original language	English
Pages (from-to)	1140-1145
Number of pages	6
Journal	Organic Electronics
Volume	9
Issue number	6
DOIs	https://doi.org/10.1016/j.orgel.2008.08.008
State	Published - Dec 2008

Keywords

Contact resistance
Metal oxide
Organic thin film transistors
Photoelectron spectroscopy

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10.1016/j.orgel.2008.08.008

Cite this

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title = "Improvement of the contact resistance between ITO and pentacene using various metal-oxide interlayers",

abstract = "Ultra-thin Al2O3, Ta2O5, and TiO2 films were deposited on the indium tin oxide (ITO) surfaces in organic thin film transistors using the atomic layer deposition (ALD) process at room temperature, and the contact resistance was significantly improved with the increase of the dielectric constant of the interlayer. The electronic band diagrams of the pentacene/ITO structures after ALD treatment on ITO surface with various metal-oxides were measured using in situ ultra-violet photoelectron spectroscopy during the step-by-step deposition of pentacene, and these results explained the decrease of the hole injection barriers and the resulting improvement of the contact resistance between pentacene/ITO interface.",

keywords = "Contact resistance, Metal oxide, Organic thin film transistors, Photoelectron spectroscopy",

author = "Hyoungsub Kim and Sunyoung Sohn and Donggeun Jung and Maeng, \{Wan Joo\} and Hyungjun Kim and Kim, \{Tae Sang\} and Jungseok Hahn and Sangyun Lee and Yeonjin Yi and Cho, \{Mann Ho\}",

year = "2008",

month = dec,

doi = "10.1016/j.orgel.2008.08.008",

language = "English",

volume = "9",

pages = "1140--1145",

journal = "Organic Electronics",

issn = "1566-1199",

publisher = "Elsevier B.V.",

number = "6",

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TY - JOUR

T1 - Improvement of the contact resistance between ITO and pentacene using various metal-oxide interlayers

AU - Kim, Hyoungsub

AU - Sohn, Sunyoung

AU - Jung, Donggeun

AU - Maeng, Wan Joo

AU - Kim, Hyungjun

AU - Kim, Tae Sang

AU - Hahn, Jungseok

AU - Lee, Sangyun

AU - Yi, Yeonjin

AU - Cho, Mann Ho

PY - 2008/12

Y1 - 2008/12

N2 - Ultra-thin Al2O3, Ta2O5, and TiO2 films were deposited on the indium tin oxide (ITO) surfaces in organic thin film transistors using the atomic layer deposition (ALD) process at room temperature, and the contact resistance was significantly improved with the increase of the dielectric constant of the interlayer. The electronic band diagrams of the pentacene/ITO structures after ALD treatment on ITO surface with various metal-oxides were measured using in situ ultra-violet photoelectron spectroscopy during the step-by-step deposition of pentacene, and these results explained the decrease of the hole injection barriers and the resulting improvement of the contact resistance between pentacene/ITO interface.

AB - Ultra-thin Al2O3, Ta2O5, and TiO2 films were deposited on the indium tin oxide (ITO) surfaces in organic thin film transistors using the atomic layer deposition (ALD) process at room temperature, and the contact resistance was significantly improved with the increase of the dielectric constant of the interlayer. The electronic band diagrams of the pentacene/ITO structures after ALD treatment on ITO surface with various metal-oxides were measured using in situ ultra-violet photoelectron spectroscopy during the step-by-step deposition of pentacene, and these results explained the decrease of the hole injection barriers and the resulting improvement of the contact resistance between pentacene/ITO interface.

KW - Contact resistance

KW - Metal oxide

KW - Organic thin film transistors

KW - Photoelectron spectroscopy

UR - https://www.scopus.com/pages/publications/53749083280

U2 - 10.1016/j.orgel.2008.08.008

DO - 10.1016/j.orgel.2008.08.008

M3 - Article

AN - SCOPUS:53749083280

SN - 1566-1199

VL - 9

SP - 1140

EP - 1145

JO - Organic Electronics

JF - Organic Electronics

IS - 6

ER -

Improvement of the contact resistance between ITO and pentacene using various metal-oxide interlayers

Abstract

Keywords

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