Improvement of PBTS stability in self-aligned coplanar a-IGZO TFTs

Saeroonter Oh; Ju Heyuck Baeck; Dohyung Lee; Taeuk Park; Hyun Soo Shin; Jong Uk Bae; Kwon Shik Park; Inbyeong Kang

doi:10.1002/sdtp.10032

Improvement of PBTS stability in self-aligned coplanar a-IGZO TFTs

Saeroonter Oh
, Ju Heyuck Baeck
, Dohyung Lee
, Taeuk Park
, Hyun Soo Shin
, Jong Uk Bae
, Kwon Shik Park
, Inbyeong Kang

LG Corporation

Research output: Contribution to journal › Conference article › peer-review

6 Scopus citations

Abstract

We improve the PBTS instability of top-gate coplanar amorphous In Ga ZnO TFTs by optimizing the buffer and gate insulator layers. The interface trap density is obtained from photonic capacitance-voltage measurements and correlated with PBTS characteristics. Inter-diffusion at the gate insulator interface lessens electron trap defects, which brings improvement in PBTS from δh = 4.2 V to 0.5 V.

Original language	English
Pages (from-to)	1143-1146
Number of pages	4
Journal	Digest of Technical Papers - SID International Symposium
Volume	46
Issue number	Book 3
DOIs	https://doi.org/10.1002/sdtp.10032
State	Published - 1 Jun 2015
Externally published	Yes
Event	2015 SID International Symposium - San Jose, United States Duration: 4 Jun 2015 → 5 Jun 2015

Keywords

A-IGZO
Coplanar
Interface trap density (Dit)
Oxide TFT
PBTS
Photo C-V method

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10.1002/sdtp.10032

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title = "Improvement of PBTS stability in self-aligned coplanar a-IGZO TFTs",

abstract = "We improve the PBTS instability of top-gate coplanar amorphous In Ga ZnO TFTs by optimizing the buffer and gate insulator layers. The interface trap density is obtained from photonic capacitance-voltage measurements and correlated with PBTS characteristics. Inter-diffusion at the gate insulator interface lessens electron trap defects, which brings improvement in PBTS from δh = 4.2 V to 0.5 V.",

keywords = "A-IGZO, Coplanar, Interface trap density (Dit), Oxide TFT, PBTS, Photo C-V method",

author = "Saeroonter Oh and Baeck, \{Ju Heyuck\} and Dohyung Lee and Taeuk Park and Shin, \{Hyun Soo\} and Bae, \{Jong Uk\} and Park, \{Kwon Shik\} and Inbyeong Kang",

note = "Publisher Copyright: {\textcopyright} 2015 SID.; 2015 SID International Symposium ; Conference date: 04-06-2015 Through 05-06-2015",

year = "2015",

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doi = "10.1002/sdtp.10032",

language = "English",

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TY - JOUR

T1 - Improvement of PBTS stability in self-aligned coplanar a-IGZO TFTs

AU - Oh, Saeroonter

AU - Baeck, Ju Heyuck

AU - Lee, Dohyung

AU - Park, Taeuk

AU - Shin, Hyun Soo

AU - Bae, Jong Uk

AU - Park, Kwon Shik

AU - Kang, Inbyeong

PY - 2015/6/1

Y1 - 2015/6/1

N2 - We improve the PBTS instability of top-gate coplanar amorphous In Ga ZnO TFTs by optimizing the buffer and gate insulator layers. The interface trap density is obtained from photonic capacitance-voltage measurements and correlated with PBTS characteristics. Inter-diffusion at the gate insulator interface lessens electron trap defects, which brings improvement in PBTS from δh = 4.2 V to 0.5 V.

AB - We improve the PBTS instability of top-gate coplanar amorphous In Ga ZnO TFTs by optimizing the buffer and gate insulator layers. The interface trap density is obtained from photonic capacitance-voltage measurements and correlated with PBTS characteristics. Inter-diffusion at the gate insulator interface lessens electron trap defects, which brings improvement in PBTS from δh = 4.2 V to 0.5 V.

KW - A-IGZO

KW - Coplanar

KW - Interface trap density (Dit)

KW - Oxide TFT

KW - PBTS

KW - Photo C-V method

UR - https://www.scopus.com/pages/publications/84962637104

U2 - 10.1002/sdtp.10032

DO - 10.1002/sdtp.10032

M3 - Conference article

AN - SCOPUS:84962637104

SN - 0097-966X

VL - 46

SP - 1143

EP - 1146

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

IS - Book 3

T2 - 2015 SID International Symposium

Y2 - 4 June 2015 through 5 June 2015

ER -

Improvement of PBTS stability in self-aligned coplanar a-IGZO TFTs

Abstract

Keywords

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