Improvement of metal gate/high-k dielectric CMOSFETs characteristics by atomic layer etching of high-k gate dielectric

K. S. Min; C. Park; C. Y. Kang; C. S. Park; B. J. Park; Y. W. Kim; B. H. Lee; Jack C. Lee; G. Bersuker; P. Kirsch; R. Jammy; G. Y. Yeom

doi:10.1016/j.sse.2012.11.008

Improvement of metal gate/high-k dielectric CMOSFETs characteristics by atomic layer etching of high-k gate dielectric

K. S. Min, C. Park, C. Y. Kang, C. S. Park, B. J. Park, Y. W. Kim, B. H. Lee, Jack C. Lee, G. Bersuker, P. Kirsch, R. Jammy, G. Y. Yeom

Department of Advanced Materials Science and Engineering

Research output: Contribution to journal › Letter › peer-review

6 Scopus citations

Abstract

Atomic layer etching (ALE) has been applied to the high-k dielectric patterning in complementary metal-oxide-semiconductor field effect transistors (CMOSFETs), and its electrical characteristics were compared with those etched by conventional etching such as wet etching (WE) or reactive ion etching (RIE). The CMOSFET etched by the ALE showed the improvement of the off-state leakage current (I_off), which was mainly attributed to the decreased perimeter component of the gate leakage current (I_G) particularly, at the low field region. The better electrical characteristics are due to the low trap density at the edge of gate oxides in the S/D region of CMOSFETs.

Original language	English
Pages (from-to)	82-85
Number of pages	4
Journal	Solid-State Electronics
Volume	82
DOIs	https://doi.org/10.1016/j.sse.2012.11.008
State	Published - 2013

Keywords

Atomic layer etching
Complementary metal-oxide-semiconductor field effect transistors (CMOSFETs)
High-k dielectric
Plasma induced damage

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10.1016/j.sse.2012.11.008

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title = "Improvement of metal gate/high-k dielectric CMOSFETs characteristics by atomic layer etching of high-k gate dielectric",

abstract = "Atomic layer etching (ALE) has been applied to the high-k dielectric patterning in complementary metal-oxide-semiconductor field effect transistors (CMOSFETs), and its electrical characteristics were compared with those etched by conventional etching such as wet etching (WE) or reactive ion etching (RIE). The CMOSFET etched by the ALE showed the improvement of the off-state leakage current (Ioff), which was mainly attributed to the decreased perimeter component of the gate leakage current (IG) particularly, at the low field region. The better electrical characteristics are due to the low trap density at the edge of gate oxides in the S/D region of CMOSFETs.",

keywords = "Atomic layer etching, Complementary metal-oxide-semiconductor field effect transistors (CMOSFETs), High-k dielectric, Plasma induced damage",

author = "Min, \{K. S.\} and C. Park and Kang, \{C. Y.\} and Park, \{C. S.\} and Park, \{B. J.\} and Kim, \{Y. W.\} and Lee, \{B. H.\} and Lee, \{Jack C.\} and G. Bersuker and P. Kirsch and R. Jammy and Yeom, \{G. Y.\}",

year = "2013",

doi = "10.1016/j.sse.2012.11.008",

language = "English",

volume = "82",

pages = "82--85",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Ltd",

}

TY - JOUR

T1 - Improvement of metal gate/high-k dielectric CMOSFETs characteristics by atomic layer etching of high-k gate dielectric

AU - Min, K. S.

AU - Park, C.

AU - Kang, C. Y.

AU - Park, C. S.

AU - Park, B. J.

AU - Kim, Y. W.

AU - Lee, B. H.

AU - Lee, Jack C.

AU - Bersuker, G.

AU - Kirsch, P.

AU - Jammy, R.

AU - Yeom, G. Y.

PY - 2013

Y1 - 2013

N2 - Atomic layer etching (ALE) has been applied to the high-k dielectric patterning in complementary metal-oxide-semiconductor field effect transistors (CMOSFETs), and its electrical characteristics were compared with those etched by conventional etching such as wet etching (WE) or reactive ion etching (RIE). The CMOSFET etched by the ALE showed the improvement of the off-state leakage current (Ioff), which was mainly attributed to the decreased perimeter component of the gate leakage current (IG) particularly, at the low field region. The better electrical characteristics are due to the low trap density at the edge of gate oxides in the S/D region of CMOSFETs.

AB - Atomic layer etching (ALE) has been applied to the high-k dielectric patterning in complementary metal-oxide-semiconductor field effect transistors (CMOSFETs), and its electrical characteristics were compared with those etched by conventional etching such as wet etching (WE) or reactive ion etching (RIE). The CMOSFET etched by the ALE showed the improvement of the off-state leakage current (Ioff), which was mainly attributed to the decreased perimeter component of the gate leakage current (IG) particularly, at the low field region. The better electrical characteristics are due to the low trap density at the edge of gate oxides in the S/D region of CMOSFETs.

KW - Atomic layer etching

KW - Complementary metal-oxide-semiconductor field effect transistors (CMOSFETs)

KW - High-k dielectric

KW - Plasma induced damage

UR - https://www.scopus.com/pages/publications/84874823124

U2 - 10.1016/j.sse.2012.11.008

DO - 10.1016/j.sse.2012.11.008

M3 - Letter

AN - SCOPUS:84874823124

SN - 0038-1101

VL - 82

SP - 82

EP - 85

JO - Solid-State Electronics

JF - Solid-State Electronics

ER -

Improvement of metal gate/high-k dielectric CMOSFETs characteristics by atomic layer etching of high-k gate dielectric

Abstract

Keywords

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