Improvement of luminous intensity of InGaN light emitting diodes grown on hemispherical patterned sapphire

Jae Hoon Lee; Jeong Tak Oh; Jin Sub Park; Je Won Kim; Yong Chun Kim; Jeong Wook Lee; Hyung Koun Cho

doi:10.1002/pssc.200565308

Improvement of luminous intensity of InGaN light emitting diodes grown on hemispherical patterned sapphire

Jae Hoon Lee
, Jeong Tak Oh
, Jin Sub Park
, Je Won Kim
, Yong Chun Kim
, Jeong Wook Lee
, Hyung Koun Cho

Department of Advanced Materials Science and Engineering

Samsung

Research output: Contribution to journal › Conference article › peer-review

54 Scopus citations

Abstract

To improve the external quantum efficiency, high quality GaN film was grown on hemispherical patterned sapphire by controlling the V/III ratio during the initial growth stage. The luminous intensity of white flash light emitting diode (LED) grown on hemispherical patterned sapphire (HPS) was estinated to be 5.8 cd at a forward current of 150 mA, which is improved by 20 % more than that of LED grown on conventional sapphire substrate. The improvement of luminous intensity was explained by considering not only an increase of the extraction efficiency via the suppressed total internal reflection at the corrugated interface but also a decrease of dislocation density.

Original language	English
Pages (from-to)	2169-2173
Number of pages	5
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	3
DOIs	https://doi.org/10.1002/pssc.200565308
State	Published - 2006
Event	6th International Conference on Nitride Semiconductors, ICNS-6 - Bremen, Germany Duration: 28 Aug 2005 → 2 Sep 2005

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title = "Improvement of luminous intensity of InGaN light emitting diodes grown on hemispherical patterned sapphire",

abstract = "To improve the external quantum efficiency, high quality GaN film was grown on hemispherical patterned sapphire by controlling the V/III ratio during the initial growth stage. The luminous intensity of white flash light emitting diode (LED) grown on hemispherical patterned sapphire (HPS) was estinated to be 5.8 cd at a forward current of 150 mA, which is improved by 20 \% more than that of LED grown on conventional sapphire substrate. The improvement of luminous intensity was explained by considering not only an increase of the extraction efficiency via the suppressed total internal reflection at the corrugated interface but also a decrease of dislocation density.",

author = "Lee, \{Jae Hoon\} and Oh, \{Jeong Tak\} and Park, \{Jin Sub\} and Kim, \{Je Won\} and Kim, \{Yong Chun\} and Lee, \{Jeong Wook\} and Cho, \{Hyung Koun\}",

year = "2006",

doi = "10.1002/pssc.200565308",

language = "English",

volume = "3",

pages = "2169--2173",

journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",

issn = "1862-6351",

publisher = "Wiley-VCH Verlag",

note = "6th International Conference on Nitride Semiconductors, ICNS-6 ; Conference date: 28-08-2005 Through 02-09-2005",

}

TY - JOUR

T1 - Improvement of luminous intensity of InGaN light emitting diodes grown on hemispherical patterned sapphire

AU - Lee, Jae Hoon

AU - Oh, Jeong Tak

AU - Park, Jin Sub

AU - Kim, Je Won

AU - Kim, Yong Chun

AU - Lee, Jeong Wook

AU - Cho, Hyung Koun

PY - 2006

Y1 - 2006

N2 - To improve the external quantum efficiency, high quality GaN film was grown on hemispherical patterned sapphire by controlling the V/III ratio during the initial growth stage. The luminous intensity of white flash light emitting diode (LED) grown on hemispherical patterned sapphire (HPS) was estinated to be 5.8 cd at a forward current of 150 mA, which is improved by 20 % more than that of LED grown on conventional sapphire substrate. The improvement of luminous intensity was explained by considering not only an increase of the extraction efficiency via the suppressed total internal reflection at the corrugated interface but also a decrease of dislocation density.

AB - To improve the external quantum efficiency, high quality GaN film was grown on hemispherical patterned sapphire by controlling the V/III ratio during the initial growth stage. The luminous intensity of white flash light emitting diode (LED) grown on hemispherical patterned sapphire (HPS) was estinated to be 5.8 cd at a forward current of 150 mA, which is improved by 20 % more than that of LED grown on conventional sapphire substrate. The improvement of luminous intensity was explained by considering not only an increase of the extraction efficiency via the suppressed total internal reflection at the corrugated interface but also a decrease of dislocation density.

UR - https://www.scopus.com/pages/publications/33746324812

U2 - 10.1002/pssc.200565308

DO - 10.1002/pssc.200565308

M3 - Conference article

AN - SCOPUS:33746324812

SN - 1862-6351

VL - 3

SP - 2169

EP - 2173

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

T2 - 6th International Conference on Nitride Semiconductors, ICNS-6

Y2 - 28 August 2005 through 2 September 2005

ER -

Improvement of luminous intensity of InGaN light emitting diodes grown on hemispherical patterned sapphire

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