Improvement of hydrogenated amorphous silicon germanium thin film solar cells by different p-type contact layer

Jaehyun Cho; Duy Phong Pham; Junhee Jung; Chonghoon Shin; Jinjoo Park; Sangho Kim; Anh Huy Tuan Le; Hyeongsik Park; S. M. Iftiquar; Junsin Yi

doi:10.1016/j.mssp.2015.10.006

Improvement of hydrogenated amorphous silicon germanium thin film solar cells by different p-type contact layer

Jaehyun Cho
, Duy Phong Pham
, Junhee Jung
, Chonghoon Shin
, Jinjoo Park
, Sangho Kim
, Anh Huy Tuan Le
, Hyeongsik Park
, S. M. Iftiquar
, Junsin Yi

Department of Electronic and Electrical Engineering

Sungkyunkwan University

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

In this study, we report an appreciably increased efficiency from 6% up to 9.1% of hydrogenated amorphous silicon germanium (a-SiGe:H) thin film solar cells by using a combination of different p-doped window layers, such as boron doped hydrogenated amorphous silicon (p-a-Si:H), amorphous silicon oxide (p-a-SiO_x:H), microcrystalline silicon (p-μc-Si:H), and microcrystalline silicon oxide (p-μc-SiO_x:H). Optoelectronic properties and the role of these p-layers in the enhancement of a-SiGe:H cell efficiency were also examined and discussed. An improvement of 1.62 mA/cm² in the short-circuit current density (J_sc) is attributed to the higher band gap of p-type silicon oxide layers. In addition, an increase in open-circuit voltage (V_oc) by 150 mV and fill factor (FF) by 6.93% is ascribed to significantly improved front TCO/p-layer interface contact.

Original language	English
Pages (from-to)	480-484
Number of pages	5
Journal	Materials Science in Semiconductor Processing
Volume	41
DOIs	https://doi.org/10.1016/j.mssp.2015.10.006
State	Published - 1 Jan 2016

Keywords

a-SiGe:H thin film solar cells
Hydrogenated microcrystalline silicon oxide
p-type contact layer

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/j.mssp.2015.10.006

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@article{262d597f8a2c4ef7a90b3fdcf1c06247,

title = "Improvement of hydrogenated amorphous silicon germanium thin film solar cells by different p-type contact layer",

abstract = "In this study, we report an appreciably increased efficiency from 6\% up to 9.1\% of hydrogenated amorphous silicon germanium (a-SiGe:H) thin film solar cells by using a combination of different p-doped window layers, such as boron doped hydrogenated amorphous silicon (p-a-Si:H), amorphous silicon oxide (p-a-SiOx:H), microcrystalline silicon (p-μc-Si:H), and microcrystalline silicon oxide (p-μc-SiOx:H). Optoelectronic properties and the role of these p-layers in the enhancement of a-SiGe:H cell efficiency were also examined and discussed. An improvement of 1.62 mA/cm2 in the short-circuit current density (Jsc) is attributed to the higher band gap of p-type silicon oxide layers. In addition, an increase in open-circuit voltage (Voc) by 150 mV and fill factor (FF) by 6.93\% is ascribed to significantly improved front TCO/p-layer interface contact.",

keywords = "a-SiGe:H thin film solar cells, Hydrogenated microcrystalline silicon oxide, p-type contact layer",

author = "Jaehyun Cho and Pham, \{Duy Phong\} and Junhee Jung and Chonghoon Shin and Jinjoo Park and Sangho Kim and \{Tuan Le\}, \{Anh Huy\} and Hyeongsik Park and Iftiquar, \{S. M.\} and Junsin Yi",

year = "2016",

month = jan,

day = "1",

doi = "10.1016/j.mssp.2015.10.006",

language = "English",

volume = "41",

pages = "480--484",

journal = "Materials Science in Semiconductor Processing",

issn = "1369-8001",

publisher = "Elsevier Ltd",

}

TY - JOUR

T1 - Improvement of hydrogenated amorphous silicon germanium thin film solar cells by different p-type contact layer

AU - Cho, Jaehyun

AU - Pham, Duy Phong

AU - Jung, Junhee

AU - Shin, Chonghoon

AU - Park, Jinjoo

AU - Kim, Sangho

AU - Tuan Le, Anh Huy

AU - Park, Hyeongsik

AU - Iftiquar, S. M.

AU - Yi, Junsin

PY - 2016/1/1

Y1 - 2016/1/1

N2 - In this study, we report an appreciably increased efficiency from 6% up to 9.1% of hydrogenated amorphous silicon germanium (a-SiGe:H) thin film solar cells by using a combination of different p-doped window layers, such as boron doped hydrogenated amorphous silicon (p-a-Si:H), amorphous silicon oxide (p-a-SiOx:H), microcrystalline silicon (p-μc-Si:H), and microcrystalline silicon oxide (p-μc-SiOx:H). Optoelectronic properties and the role of these p-layers in the enhancement of a-SiGe:H cell efficiency were also examined and discussed. An improvement of 1.62 mA/cm2 in the short-circuit current density (Jsc) is attributed to the higher band gap of p-type silicon oxide layers. In addition, an increase in open-circuit voltage (Voc) by 150 mV and fill factor (FF) by 6.93% is ascribed to significantly improved front TCO/p-layer interface contact.

AB - In this study, we report an appreciably increased efficiency from 6% up to 9.1% of hydrogenated amorphous silicon germanium (a-SiGe:H) thin film solar cells by using a combination of different p-doped window layers, such as boron doped hydrogenated amorphous silicon (p-a-Si:H), amorphous silicon oxide (p-a-SiOx:H), microcrystalline silicon (p-μc-Si:H), and microcrystalline silicon oxide (p-μc-SiOx:H). Optoelectronic properties and the role of these p-layers in the enhancement of a-SiGe:H cell efficiency were also examined and discussed. An improvement of 1.62 mA/cm2 in the short-circuit current density (Jsc) is attributed to the higher band gap of p-type silicon oxide layers. In addition, an increase in open-circuit voltage (Voc) by 150 mV and fill factor (FF) by 6.93% is ascribed to significantly improved front TCO/p-layer interface contact.

KW - a-SiGe:H thin film solar cells

KW - Hydrogenated microcrystalline silicon oxide

KW - p-type contact layer

UR - https://www.scopus.com/pages/publications/84945251898

U2 - 10.1016/j.mssp.2015.10.006

DO - 10.1016/j.mssp.2015.10.006

M3 - Article

AN - SCOPUS:84945251898

SN - 1369-8001

VL - 41

SP - 480

EP - 484

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

ER -

Improvement of hydrogenated amorphous silicon germanium thin film solar cells by different p-type contact layer

Abstract

Keywords

UN SDGs

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