TY - GEN
T1 - Improvement of a block co-polymer (PS-b-PDMS) template etch profile using amorphous carbon layer
AU - Oh, Jisoo
AU - Oh, Jong Sik
AU - Sung, Dain
AU - Yim, Soonmin
AU - Song, Seungwon
AU - Yeom, Geunyoung
N1 - Publisher Copyright:
© 2017 SPIE.
PY - 2017
Y1 - 2017
N2 - Block copolymers (BCPs) are consisted of at least two types of monomers which have covalent bonding. One of the widely investigated BCPs is polystyrene-block-polydimethylsiloxane (PS-b-PDMS), which is used as an alternative patterning method for various deep nanoscale devices due to its high Flory-Huggins interaction parameter (χ), such as optical devices and transistors, replacing conventional photolithography. As an alternate or supplementary nextgeneration lithography technology to extreme ultraviolet lithography (EUVL), BCP lithography utilizing the DSA of BCP has been actively studied. However, the nanoscale BCP mask material is easily damaged by the plasma and has a very low etch selectivity over bottom semiconductor materials, because it is composed of polymeric materials even though it contains Si in PDMS. In this study, an amorphous carbon layer (ACL) was inserted as a hardmask material between BCP and materials to be patterned, and, by using O2 plasmas, the characteristics of dry etching of ACL for high aspect ratio (HAR) using a 10 nm PDMS pattern were investigated. The results showed that, by using a PS-b-PDMS pattern with an aspect ratio of 0.3∼0.9:1, a HAR PDMS/ACL double layer mask with an aspect ratio of ∼10:1 could be fabricated. In addition, by the optimization of the plasma etch process, ACL masks with excellent sidewall roughness (SWR,1.35 nm) and sidewall angle (SWA, 87.9) could be fabricated.
AB - Block copolymers (BCPs) are consisted of at least two types of monomers which have covalent bonding. One of the widely investigated BCPs is polystyrene-block-polydimethylsiloxane (PS-b-PDMS), which is used as an alternative patterning method for various deep nanoscale devices due to its high Flory-Huggins interaction parameter (χ), such as optical devices and transistors, replacing conventional photolithography. As an alternate or supplementary nextgeneration lithography technology to extreme ultraviolet lithography (EUVL), BCP lithography utilizing the DSA of BCP has been actively studied. However, the nanoscale BCP mask material is easily damaged by the plasma and has a very low etch selectivity over bottom semiconductor materials, because it is composed of polymeric materials even though it contains Si in PDMS. In this study, an amorphous carbon layer (ACL) was inserted as a hardmask material between BCP and materials to be patterned, and, by using O2 plasmas, the characteristics of dry etching of ACL for high aspect ratio (HAR) using a 10 nm PDMS pattern were investigated. The results showed that, by using a PS-b-PDMS pattern with an aspect ratio of 0.3∼0.9:1, a HAR PDMS/ACL double layer mask with an aspect ratio of ∼10:1 could be fabricated. In addition, by the optimization of the plasma etch process, ACL masks with excellent sidewall roughness (SWR,1.35 nm) and sidewall angle (SWA, 87.9) could be fabricated.
KW - Amorphous carbon
KW - Block co-polymer
KW - Etch profile
KW - Plasma
KW - PS-b-PDMS
UR - https://www.scopus.com/pages/publications/85020406694
U2 - 10.1117/12.2258147
DO - 10.1117/12.2258147
M3 - Conference contribution
AN - SCOPUS:85020406694
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - Advanced Etch Technology for Nanopatterning VI
A2 - Wise, Richard S.
A2 - Engelmann, Sebastian U.
PB - SPIE
T2 - Advanced Etch Technology for Nanopatterning VI 2017
Y2 - 27 February 2017 through 1 March 2017
ER -