Improvement in etch selectivity of SiO2 to CVD amorphous carbon mask in dual-frequency capacitively coupled C4F8/CH 2F2/O2/Ar plasmas

B. S. Kwon; J. S. Kim; H. K. Moon; N. E. Lee

doi:10.1016/j.tsf.2010.04.060

Improvement in etch selectivity of SiO₂ to CVD amorphous carbon mask in dual-frequency capacitively coupled C₄F₈/CH ₂F₂/O₂/Ar plasmas

B. S. Kwon
, J. S. Kim
, H. K. Moon
, N. E. Lee

Department of Advanced Materials Science and Engineering

Sungkyunkwan University

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

Highly selective etching of a SiO₂ layer using a chemical vapor deposited (CVD) amorphous carbon (a-C) mask pattern was investigated in a dual-frequency superimposed capacitively coupled plasma etcher. The following process parameters of the C₄F₈/CH₂F ₂/O₂/Ar plasmas were varied: the CH₂F ₂/(CH₂F₂ + O₂) flow ratio (Q(CH ₂F₂)), the high frequency power (P_HF), and the low frequency power (P_LF). It was found a process window exists to obtain infinitely high etch selectivity of the SiO₂ layer to the CVD a-C. The process parameters of Q(CH₂F₂), P_HF, and P_LF played critical roles in determining the process window for oxide/CVD a-C etch selectivity, presumably due to the disproportionate degree of polymerization on the SiO₂ and CVD a-C surfaces.

Original language	English
Pages (from-to)	6451-6454
Number of pages	4
Journal	Thin Solid Films
Volume	518
Issue number	22
DOIs	https://doi.org/10.1016/j.tsf.2010.04.060
State	Published - 1 Sep 2010

Keywords

CVD a-C
Dual-frequency superimposed capacitively coupled plasma (DFS-CCP)
Plasma etching
Silicon dioxide (SiO)

Access to Document

10.1016/j.tsf.2010.04.060

Cite this

@article{3067da1607b44a85a42c05632b5f7339,

title = "Improvement in etch selectivity of SiO2 to CVD amorphous carbon mask in dual-frequency capacitively coupled C4F8/CH 2F2/O2/Ar plasmas",

abstract = "Highly selective etching of a SiO2 layer using a chemical vapor deposited (CVD) amorphous carbon (a-C) mask pattern was investigated in a dual-frequency superimposed capacitively coupled plasma etcher. The following process parameters of the C4F8/CH2F 2/O2/Ar plasmas were varied: the CH2F 2/(CH2F2 + O2) flow ratio (Q(CH 2F2)), the high frequency power (PHF), and the low frequency power (PLF). It was found a process window exists to obtain infinitely high etch selectivity of the SiO2 layer to the CVD a-C. The process parameters of Q(CH2F2), PHF, and PLF played critical roles in determining the process window for oxide/CVD a-C etch selectivity, presumably due to the disproportionate degree of polymerization on the SiO2 and CVD a-C surfaces.",

keywords = "CVD a-C, Dual-frequency superimposed capacitively coupled plasma (DFS-CCP), Plasma etching, Silicon dioxide (SiO)",

author = "Kwon, \{B. S.\} and Kim, \{J. S.\} and Moon, \{H. K.\} and Lee, \{N. E.\}",

year = "2010",

month = sep,

day = "1",

doi = "10.1016/j.tsf.2010.04.060",

language = "English",

volume = "518",

pages = "6451--6454",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

number = "22",

}

TY - JOUR

T1 - Improvement in etch selectivity of SiO2 to CVD amorphous carbon mask in dual-frequency capacitively coupled C4F8/CH 2F2/O2/Ar plasmas

AU - Kwon, B. S.

AU - Kim, J. S.

AU - Moon, H. K.

AU - Lee, N. E.

PY - 2010/9/1

Y1 - 2010/9/1

N2 - Highly selective etching of a SiO2 layer using a chemical vapor deposited (CVD) amorphous carbon (a-C) mask pattern was investigated in a dual-frequency superimposed capacitively coupled plasma etcher. The following process parameters of the C4F8/CH2F 2/O2/Ar plasmas were varied: the CH2F 2/(CH2F2 + O2) flow ratio (Q(CH 2F2)), the high frequency power (PHF), and the low frequency power (PLF). It was found a process window exists to obtain infinitely high etch selectivity of the SiO2 layer to the CVD a-C. The process parameters of Q(CH2F2), PHF, and PLF played critical roles in determining the process window for oxide/CVD a-C etch selectivity, presumably due to the disproportionate degree of polymerization on the SiO2 and CVD a-C surfaces.

AB - Highly selective etching of a SiO2 layer using a chemical vapor deposited (CVD) amorphous carbon (a-C) mask pattern was investigated in a dual-frequency superimposed capacitively coupled plasma etcher. The following process parameters of the C4F8/CH2F 2/O2/Ar plasmas were varied: the CH2F 2/(CH2F2 + O2) flow ratio (Q(CH 2F2)), the high frequency power (PHF), and the low frequency power (PLF). It was found a process window exists to obtain infinitely high etch selectivity of the SiO2 layer to the CVD a-C. The process parameters of Q(CH2F2), PHF, and PLF played critical roles in determining the process window for oxide/CVD a-C etch selectivity, presumably due to the disproportionate degree of polymerization on the SiO2 and CVD a-C surfaces.

KW - CVD a-C

KW - Dual-frequency superimposed capacitively coupled plasma (DFS-CCP)

KW - Plasma etching

KW - Silicon dioxide (SiO)

UR - https://www.scopus.com/pages/publications/77956064606

U2 - 10.1016/j.tsf.2010.04.060

DO - 10.1016/j.tsf.2010.04.060

M3 - Article

AN - SCOPUS:77956064606

SN - 0040-6090

VL - 518

SP - 6451

EP - 6454

JO - Thin Solid Films

JF - Thin Solid Films

IS - 22

ER -

Improvement in etch selectivity of SiO₂ to CVD amorphous carbon mask in dual-frequency capacitively coupled C₄F₈/CH ₂F₂/O₂/Ar plasmas

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this