Improved Reliability of a-IGZO Thin Film Transistor through Organic/Inorganic Passivation Layer

Tae Eun Ha; Jeong Hyun Ahn; Eun Kyung Jo; Eun Kyo Jung; Hwarim Im; Yong Sang Kim

Improved Reliability of a-IGZO Thin Film Transistor through Organic/Inorganic Passivation Layer

Tae Eun Ha
, Jeong Hyun Ahn
, Eun Kyung Jo
, Eun Kyo Jung
, Hwarim Im
, Yong Sang Kim

Sungkyunkwan University

Research output: Contribution to journal › Conference article › peer-review

Abstract

The electrical characteristics and reliability of an amorphous indium gallium zinc oxide thin film transistor (a-IGZO TFT) was improved two materials, organic and inorganic, as a passivation layer in a stacked structure. it can reduce defect state and acts as an excellent barrier against adsorption/desorption of atmospheric molecules.

Original language	English
Pages (from-to)	202-205
Number of pages	4
Journal	Proceedings of the International Display Workshops
Volume	29
State	Published - 2022
Externally published	Yes
Event	29th International Display Workshops, IDW 2022 - Fukuoka, Japan Duration: 14 Dec 2022 → 16 Dec 2022

Keywords

Hybrid passivation
IGZO
Oxide thin film transistor
Sol-gel

Cite this

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title = "Improved Reliability of a-IGZO Thin Film Transistor through Organic/Inorganic Passivation Layer",

abstract = "The electrical characteristics and reliability of an amorphous indium gallium zinc oxide thin film transistor (a-IGZO TFT) was improved two materials, organic and inorganic, as a passivation layer in a stacked structure. it can reduce defect state and acts as an excellent barrier against adsorption/desorption of atmospheric molecules.",

keywords = "Hybrid passivation, IGZO, Oxide thin film transistor, Sol-gel",

author = "Ha, \{Tae Eun\} and Ahn, \{Jeong Hyun\} and Jo, \{Eun Kyung\} and Jung, \{Eun Kyo\} and Hwarim Im and Kim, \{Yong Sang\}",

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language = "English",

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TY - JOUR

T1 - Improved Reliability of a-IGZO Thin Film Transistor through Organic/Inorganic Passivation Layer

AU - Ha, Tae Eun

AU - Ahn, Jeong Hyun

AU - Jo, Eun Kyung

AU - Jung, Eun Kyo

AU - Im, Hwarim

AU - Kim, Yong Sang

PY - 2022

Y1 - 2022

N2 - The electrical characteristics and reliability of an amorphous indium gallium zinc oxide thin film transistor (a-IGZO TFT) was improved two materials, organic and inorganic, as a passivation layer in a stacked structure. it can reduce defect state and acts as an excellent barrier against adsorption/desorption of atmospheric molecules.

AB - The electrical characteristics and reliability of an amorphous indium gallium zinc oxide thin film transistor (a-IGZO TFT) was improved two materials, organic and inorganic, as a passivation layer in a stacked structure. it can reduce defect state and acts as an excellent barrier against adsorption/desorption of atmospheric molecules.

KW - Hybrid passivation

KW - IGZO

KW - Oxide thin film transistor

KW - Sol-gel

UR - https://www.scopus.com/pages/publications/85175265514

M3 - Conference article

AN - SCOPUS:85175265514

SN - 1883-2490

VL - 29

SP - 202

EP - 205

JO - Proceedings of the International Display Workshops

JF - Proceedings of the International Display Workshops

T2 - 29th International Display Workshops, IDW 2022

Y2 - 14 December 2022 through 16 December 2022

ER -

Improved Reliability of a-IGZO Thin Film Transistor through Organic/Inorganic Passivation Layer

Abstract

Keywords

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