Improved quality and reliability of ultrathin (1.4-2.3 nm) gate oxides by radical-assisted oxidation utilizing a remote ultraviolet ozone source

Young Joo Song; Bongki Mheen; Sang Hoon Kim; Hyun Chul Bae; Jin Young Kang; Young Shik Lee; Nae Eung Lee; Kyu Hwan Shim

doi:10.1116/1.1755215

Improved quality and reliability of ultrathin (1.4-2.3 nm) gate oxides by radical-assisted oxidation utilizing a remote ultraviolet ozone source

Young Joo Song
, Bongki Mheen
, Sang Hoon Kim
, Hyun Chul Bae
, Jin Young Kang
, Young Shik Lee
, Nae Eung Lee
, Kyu Hwan Shim

Department of Advanced Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Original language	English
Pages (from-to)	1206-1209
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	22
Issue number	3
DOIs	https://doi.org/10.1116/1.1755215
State	Published - 2004

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10.1116/1.1755215

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Song, Y. J., Mheen, B., Kim, S. H., Bae, H. C., Kang, J. Y., Lee, Y. S., Lee, N. E., & Shim, K. H. (2004). Improved quality and reliability of ultrathin (1.4-2.3 nm) gate oxides by radical-assisted oxidation utilizing a remote ultraviolet ozone source. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 22(3), 1206-1209. https://doi.org/10.1116/1.1755215

@article{8075a50912d74bdb84bf7c1c6dba078a,

title = "Improved quality and reliability of ultrathin (1.4-2.3 nm) gate oxides by radical-assisted oxidation utilizing a remote ultraviolet ozone source",

author = "Song, \{Young Joo\} and Bongki Mheen and Kim, \{Sang Hoon\} and Bae, \{Hyun Chul\} and Kang, \{Jin Young\} and Lee, \{Young Shik\} and Lee, \{Nae Eung\} and Shim, \{Kyu Hwan\}",

year = "2004",

doi = "10.1116/1.1755215",

language = "English",

volume = "22",

pages = "1206--1209",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

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Song, YJ, Mheen, B, Kim, SH, Bae, HC, Kang, JY, Lee, YS, Lee, NE & Shim, KH 2004, 'Improved quality and reliability of ultrathin (1.4-2.3 nm) gate oxides by radical-assisted oxidation utilizing a remote ultraviolet ozone source', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 22, no. 3, pp. 1206-1209. https://doi.org/10.1116/1.1755215

Improved quality and reliability of ultrathin (1.4-2.3 nm) gate oxides by radical-assisted oxidation utilizing a remote ultraviolet ozone source. / Song, Young Joo; Mheen, Bongki; Kim, Sang Hoon et al.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 22, No. 3, 2004, p. 1206-1209.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Improved quality and reliability of ultrathin (1.4-2.3 nm) gate oxides by radical-assisted oxidation utilizing a remote ultraviolet ozone source

AU - Song, Young Joo

AU - Mheen, Bongki

AU - Kim, Sang Hoon

AU - Bae, Hyun Chul

AU - Kang, Jin Young

AU - Lee, Young Shik

AU - Lee, Nae Eung

AU - Shim, Kyu Hwan

PY - 2004

Y1 - 2004

UR - https://www.scopus.com/pages/publications/3242721461

U2 - 10.1116/1.1755215

DO - 10.1116/1.1755215

M3 - Article

AN - SCOPUS:3242721461

SN - 1071-1023

VL - 22

SP - 1206

EP - 1209

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 3

ER -

Improved quality and reliability of ultrathin (1.4-2.3 nm) gate oxides by radical-assisted oxidation utilizing a remote ultraviolet ozone source

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