Improved performance of quantum dot light emitting diodes by using charge blocking layer

Myeongjin Park; Jaehoon Lim; Yongwon Kwon; Heeyoung Jung; Jeonghun Kwak; Kookheon Chat; Seonghoon Lee; Changhee Lee

doi:10.1002/j.2168-0159.2014.tb00343.x

Improved performance of quantum dot light emitting diodes by using charge blocking layer

Myeongjin Park
, Jaehoon Lim
, Yongwon Kwon
, Heeyoung Jung
, Jeonghun Kwak
, Kookheon Chat
, Seonghoon Lee
, Changhee Lee

Seoul National University
Dong-A University

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We fabricated highly bright and efficient inverted quantum dot (QD) light emitting by using double charge injection layer with organic electron transport material. Using organic electron blocking layer, the controlled injection of carriers was achieved by cascaded energy levels, leading to the decreasing carrier injection into QDs. The improved performance can be attributed to adjust charge injection into the QD emissive layer and reduce exciton quenching.

Original language	English
Pages (from-to)	1309-1311
Number of pages	3
Journal	Digest of Technical Papers - SID International Symposium
Volume	45
Issue number	1
DOIs	https://doi.org/10.1002/j.2168-0159.2014.tb00343.x
State	Published - Jun 2014
Externally published	Yes

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

charge blocking layer
inverted structure
light-emitting diodes
quantum dots

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10.1002/j.2168-0159.2014.tb00343.x

Cite this

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title = "Improved performance of quantum dot light emitting diodes by using charge blocking layer",

abstract = "We fabricated highly bright and efficient inverted quantum dot (QD) light emitting by using double charge injection layer with organic electron transport material. Using organic electron blocking layer, the controlled injection of carriers was achieved by cascaded energy levels, leading to the decreasing carrier injection into QDs. The improved performance can be attributed to adjust charge injection into the QD emissive layer and reduce exciton quenching.",

keywords = "charge blocking layer, inverted structure, light-emitting diodes, quantum dots",

author = "Myeongjin Park and Jaehoon Lim and Yongwon Kwon and Heeyoung Jung and Jeonghun Kwak and Kookheon Chat and Seonghoon Lee and Changhee Lee",

year = "2014",

month = jun,

doi = "10.1002/j.2168-0159.2014.tb00343.x",

language = "English",

volume = "45",

pages = "1309--1311",

journal = "Digest of Technical Papers - SID International Symposium",

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TY - JOUR

T1 - Improved performance of quantum dot light emitting diodes by using charge blocking layer

AU - Park, Myeongjin

AU - Lim, Jaehoon

AU - Kwon, Yongwon

AU - Jung, Heeyoung

AU - Kwak, Jeonghun

AU - Chat, Kookheon

AU - Lee, Seonghoon

AU - Lee, Changhee

PY - 2014/6

Y1 - 2014/6

N2 - We fabricated highly bright and efficient inverted quantum dot (QD) light emitting by using double charge injection layer with organic electron transport material. Using organic electron blocking layer, the controlled injection of carriers was achieved by cascaded energy levels, leading to the decreasing carrier injection into QDs. The improved performance can be attributed to adjust charge injection into the QD emissive layer and reduce exciton quenching.

AB - We fabricated highly bright and efficient inverted quantum dot (QD) light emitting by using double charge injection layer with organic electron transport material. Using organic electron blocking layer, the controlled injection of carriers was achieved by cascaded energy levels, leading to the decreasing carrier injection into QDs. The improved performance can be attributed to adjust charge injection into the QD emissive layer and reduce exciton quenching.

KW - charge blocking layer

KW - inverted structure

KW - light-emitting diodes

KW - quantum dots

UR - https://www.scopus.com/pages/publications/84905051983

U2 - 10.1002/j.2168-0159.2014.tb00343.x

DO - 10.1002/j.2168-0159.2014.tb00343.x

M3 - Article

AN - SCOPUS:84905051983

SN - 0097-966X

VL - 45

SP - 1309

EP - 1311

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

IS - 1

ER -

Improved performance of quantum dot light emitting diodes by using charge blocking layer

Abstract

UN SDGs

Keywords

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