Improved electrical conductivity of graphene films integrated with metal nanowires

Iskandar N. Kholmanov; Carl W. Magnuson; Ali E. Aliev; Huifeng Li; Bin Zhang; Ji Won Suk; Li Li Zhang; Eric Peng; S. Hossein Mousavi; Alexander B. Khanikaev; Richard Piner; Gennady Shvets; Rodney S. Ruoff

doi:10.1021/nl302870x

Improved electrical conductivity of graphene films integrated with metal nanowires

Iskandar N. Kholmanov
, Carl W. Magnuson
, Ali E. Aliev
, Huifeng Li
, Bin Zhang
, Ji Won Suk
, Li Li Zhang
, Eric Peng
, S. Hossein Mousavi
, Alexander B. Khanikaev
, Richard Piner
, Gennady Shvets
, Rodney S. Ruoff

University of Texas at Austin
University of Brescia
University of Texas at Dallas

Research output: Contribution to journal › Article › peer-review

312 Scopus citations

Abstract

Polycrystalline graphene grown by chemical vapor deposition (CVD) on metals and transferred onto arbitrary substrates has line defects and disruptions such as wrinkles, ripples, and folding that adversely affect graphene transport properties through the scattering of the charge carriers. It is found that graphene assembled with metal nanowires (NWs) dramatically decreases the resistance of graphene films. Graphene/NW films with a sheet resistance comparable to that of the intrinsic resistance of graphene have been obtained and tested as a transparent electrode replacing indium tin oxide films in electrochromic (EC) devices. The successful integration of such graphene/NW films into EC devices demonstrates their potential for a wide range of optoelectronic device applications.

Original language	English
Pages (from-to)	5679-5683
Number of pages	5
Journal	Nano Letters
Volume	12
Issue number	11
DOIs	https://doi.org/10.1021/nl302870x
State	Published - 14 Nov 2012
Externally published	Yes

Keywords

electrochromic devices
Graphene
nanowires
transparent conductive films

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10.1021/nl302870x

Cite this

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title = "Improved electrical conductivity of graphene films integrated with metal nanowires",

abstract = "Polycrystalline graphene grown by chemical vapor deposition (CVD) on metals and transferred onto arbitrary substrates has line defects and disruptions such as wrinkles, ripples, and folding that adversely affect graphene transport properties through the scattering of the charge carriers. It is found that graphene assembled with metal nanowires (NWs) dramatically decreases the resistance of graphene films. Graphene/NW films with a sheet resistance comparable to that of the intrinsic resistance of graphene have been obtained and tested as a transparent electrode replacing indium tin oxide films in electrochromic (EC) devices. The successful integration of such graphene/NW films into EC devices demonstrates their potential for a wide range of optoelectronic device applications.",

keywords = "electrochromic devices, Graphene, nanowires, transparent conductive films",

author = "Kholmanov, \{Iskandar N.\} and Magnuson, \{Carl W.\} and Aliev, \{Ali E.\} and Huifeng Li and Bin Zhang and Suk, \{Ji Won\} and Zhang, \{Li Li\} and Eric Peng and Mousavi, \{S. Hossein\} and Khanikaev, \{Alexander B.\} and Richard Piner and Gennady Shvets and Ruoff, \{Rodney S.\}",

year = "2012",

month = nov,

day = "14",

doi = "10.1021/nl302870x",

language = "English",

volume = "12",

pages = "5679--5683",

journal = "Nano Letters",

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TY - JOUR

T1 - Improved electrical conductivity of graphene films integrated with metal nanowires

AU - Kholmanov, Iskandar N.

AU - Magnuson, Carl W.

AU - Aliev, Ali E.

AU - Li, Huifeng

AU - Zhang, Bin

AU - Suk, Ji Won

AU - Zhang, Li Li

AU - Peng, Eric

AU - Mousavi, S. Hossein

AU - Khanikaev, Alexander B.

AU - Piner, Richard

AU - Shvets, Gennady

AU - Ruoff, Rodney S.

PY - 2012/11/14

Y1 - 2012/11/14

N2 - Polycrystalline graphene grown by chemical vapor deposition (CVD) on metals and transferred onto arbitrary substrates has line defects and disruptions such as wrinkles, ripples, and folding that adversely affect graphene transport properties through the scattering of the charge carriers. It is found that graphene assembled with metal nanowires (NWs) dramatically decreases the resistance of graphene films. Graphene/NW films with a sheet resistance comparable to that of the intrinsic resistance of graphene have been obtained and tested as a transparent electrode replacing indium tin oxide films in electrochromic (EC) devices. The successful integration of such graphene/NW films into EC devices demonstrates their potential for a wide range of optoelectronic device applications.

AB - Polycrystalline graphene grown by chemical vapor deposition (CVD) on metals and transferred onto arbitrary substrates has line defects and disruptions such as wrinkles, ripples, and folding that adversely affect graphene transport properties through the scattering of the charge carriers. It is found that graphene assembled with metal nanowires (NWs) dramatically decreases the resistance of graphene films. Graphene/NW films with a sheet resistance comparable to that of the intrinsic resistance of graphene have been obtained and tested as a transparent electrode replacing indium tin oxide films in electrochromic (EC) devices. The successful integration of such graphene/NW films into EC devices demonstrates their potential for a wide range of optoelectronic device applications.

KW - electrochromic devices

KW - Graphene

KW - nanowires

KW - transparent conductive films

UR - https://www.scopus.com/pages/publications/84869155437

U2 - 10.1021/nl302870x

DO - 10.1021/nl302870x

M3 - Article

AN - SCOPUS:84869155437

SN - 1530-6984

VL - 12

SP - 5679

EP - 5683

JO - Nano Letters

JF - Nano Letters

IS - 11

ER -

Improved electrical conductivity of graphene films integrated with metal nanowires

Abstract

Keywords

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