Improved Data Retention of InSnZnO Nonvolatile Memory by H2O2 Treated Al2O3 Tunneling Layer: A Cost-Effective Method

Jayapal Raja; Cam Phu Thi Nguyen; Changmin Lee; Nagarajan Balaji; Somenath Chatterjee; Kyungsoo Jang; Hyoungsub Kim; Junsin Yi

doi:10.1109/LED.2016.2599559

Improved Data Retention of InSnZnO Nonvolatile Memory by H₂O₂ Treated Al₂O₃ Tunneling Layer: A Cost-Effective Method

Jayapal Raja
, Cam Phu Thi Nguyen
, Changmin Lee
, Nagarajan Balaji
, Somenath Chatterjee
, Kyungsoo Jang
, Hyoungsub Kim
, Junsin Yi

Research output: Contribution to journal › Article › peer-review

55 Scopus citations

Abstract

An experiential aspect regarding the improvement of retention characteristics of InSnZnO (ITZO) thin-film transistor-based nonvolatile memory (TFT-NVM) devices with a hydrogen peroxide H₂O₂ treated Aluminum oxide (Al₂O₃) tunneling layer is reported. A better performance in retention of ∼ 92 % (after ten years), a smaller subthreshold swing of 96 mV/decade, and a higher field effect mobility of 31.08 cm²V·s were obtained in H₂O₂ treated TFT-NVM devices compared with untreated one. Furthermore, employing the H₂O₂treatment in the Al₂O₃ layer provided oxygen-rich (O/Al ratio = 1.45) and OH^- residuals free Al₂O₃, which effectively minimized the interface states ( 1.34 × 10¹¹ cm^-2 eV^-1) between the ITZO/(Al₂O₃/SiO_x/SiO₂) stack through strong oxidation. These results suggest that high-quality Al₂O₃ dielectric layer can be obtained through cost-effective H₂O₂ oxidation techniques for TFT-NVM devices.

Original language	English
Article number	7542157
Pages (from-to)	1272-1275
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	37
Issue number	10
DOIs	https://doi.org/10.1109/LED.2016.2599559
State	Published - Oct 2016

Keywords

AlO
Charge trap memory
ITZO NVM
low-temperature oxidation
peroxo group

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10.1109/LED.2016.2599559

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@article{c9627478b64b43fbac73b0c85f66fa5c,

title = "Improved Data Retention of InSnZnO Nonvolatile Memory by H2O2 Treated Al2O3 Tunneling Layer: A Cost-Effective Method",

abstract = "An experiential aspect regarding the improvement of retention characteristics of InSnZnO (ITZO) thin-film transistor-based nonvolatile memory (TFT-NVM) devices with a hydrogen peroxide H2O2 treated Aluminum oxide (Al2O3) tunneling layer is reported. A better performance in retention of ∼ 92 \% (after ten years), a smaller subthreshold swing of 96 mV/decade, and a higher field effect mobility of 31.08 cm2V·s were obtained in H2O2 treated TFT-NVM devices compared with untreated one. Furthermore, employing the H2O2treatment in the Al2O3 layer provided oxygen-rich (O/Al ratio = 1.45) and OH- residuals free Al2O3, which effectively minimized the interface states ( 1.34 × 1011 cm-2 eV-1) between the ITZO/(Al2O3/SiOx/SiO2) stack through strong oxidation. These results suggest that high-quality Al2O3 dielectric layer can be obtained through cost-effective H2O2 oxidation techniques for TFT-NVM devices.",

keywords = "AlO, Charge trap memory, ITZO NVM, low-temperature oxidation, peroxo group",

author = "Jayapal Raja and Nguyen, \{Cam Phu Thi\} and Changmin Lee and Nagarajan Balaji and Somenath Chatterjee and Kyungsoo Jang and Hyoungsub Kim and Junsin Yi",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.",

year = "2016",

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doi = "10.1109/LED.2016.2599559",

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volume = "37",

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T2 - A Cost-Effective Method

AU - Raja, Jayapal

AU - Nguyen, Cam Phu Thi

AU - Lee, Changmin

AU - Balaji, Nagarajan

AU - Chatterjee, Somenath

AU - Jang, Kyungsoo

AU - Kim, Hyoungsub

AU - Yi, Junsin

PY - 2016/10

Y1 - 2016/10

N2 - An experiential aspect regarding the improvement of retention characteristics of InSnZnO (ITZO) thin-film transistor-based nonvolatile memory (TFT-NVM) devices with a hydrogen peroxide H2O2 treated Aluminum oxide (Al2O3) tunneling layer is reported. A better performance in retention of ∼ 92 % (after ten years), a smaller subthreshold swing of 96 mV/decade, and a higher field effect mobility of 31.08 cm2V·s were obtained in H2O2 treated TFT-NVM devices compared with untreated one. Furthermore, employing the H2O2treatment in the Al2O3 layer provided oxygen-rich (O/Al ratio = 1.45) and OH- residuals free Al2O3, which effectively minimized the interface states ( 1.34 × 1011 cm-2 eV-1) between the ITZO/(Al2O3/SiOx/SiO2) stack through strong oxidation. These results suggest that high-quality Al2O3 dielectric layer can be obtained through cost-effective H2O2 oxidation techniques for TFT-NVM devices.

AB - An experiential aspect regarding the improvement of retention characteristics of InSnZnO (ITZO) thin-film transistor-based nonvolatile memory (TFT-NVM) devices with a hydrogen peroxide H2O2 treated Aluminum oxide (Al2O3) tunneling layer is reported. A better performance in retention of ∼ 92 % (after ten years), a smaller subthreshold swing of 96 mV/decade, and a higher field effect mobility of 31.08 cm2V·s were obtained in H2O2 treated TFT-NVM devices compared with untreated one. Furthermore, employing the H2O2treatment in the Al2O3 layer provided oxygen-rich (O/Al ratio = 1.45) and OH- residuals free Al2O3, which effectively minimized the interface states ( 1.34 × 1011 cm-2 eV-1) between the ITZO/(Al2O3/SiOx/SiO2) stack through strong oxidation. These results suggest that high-quality Al2O3 dielectric layer can be obtained through cost-effective H2O2 oxidation techniques for TFT-NVM devices.

KW - AlO

KW - Charge trap memory

KW - ITZO NVM

KW - low-temperature oxidation

KW - peroxo group

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DO - 10.1109/LED.2016.2599559

M3 - Article

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JO - IEEE Electron Device Letters

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M1 - 7542157

ER -

Improved Data Retention of InSnZnO Nonvolatile Memory by H₂O₂ Treated Al₂O₃ Tunneling Layer: A Cost-Effective Method

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Keywords

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