Improved characteristics for Metal-nGaSb Ohmic contact by using Indium Gallium Zinc Oxide (IGZO)

Jeong Hun Shin; Hyun Wook Jung; Jin Hong Park

doi:10.1149/05807.0361ecst

Improved characteristics for Metal-nGaSb Ohmic contact by using Indium Gallium Zinc Oxide (IGZO)

Jeong Hun Shin
, Hyun Wook Jung
, Jin Hong Park

Department of Electronic and Electrical Engineering

Sungkyunkwan University
Samsung

Research output: Contribution to journal › Article › peer-review

Abstract

We introduce an excellent Ohmic contact technique in n-type GaSb by using a thin (∼ 5 nm thick) Indium Gallium Zinc Oxide (IGZO), achieving a high on-current density of 6.804 A/cm³ and a low on/off-current ratio of 1.64 and also resolving Fermi level pinning problem near the valence band edge. A thin IGZO on n-type GaSb annealed at 500°C before metal deposition contributes to Ohmic contact formation because of two main causes; (1) InSb narrows the energy bandgap and (2) free Sb as traps induces tunneling current.

Original language	English
Pages (from-to)	361-365
Number of pages	5
Journal	ECS Transactions
Volume	58
Issue number	7
DOIs	https://doi.org/10.1149/05807.0361ecst
State	Published - 2013

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@article{c9d879ae54d74e688b481ad9bdf75124,

title = "Improved characteristics for Metal-nGaSb Ohmic contact by using Indium Gallium Zinc Oxide (IGZO)",

abstract = "We introduce an excellent Ohmic contact technique in n-type GaSb by using a thin (∼ 5 nm thick) Indium Gallium Zinc Oxide (IGZO), achieving a high on-current density of 6.804 A/cm3 and a low on/off-current ratio of 1.64 and also resolving Fermi level pinning problem near the valence band edge. A thin IGZO on n-type GaSb annealed at 500°C before metal deposition contributes to Ohmic contact formation because of two main causes; (1) InSb narrows the energy bandgap and (2) free Sb as traps induces tunneling current.",

author = "Shin, \{Jeong Hun\} and Jung, \{Hyun Wook\} and Park, \{Jin Hong\}",

year = "2013",

doi = "10.1149/05807.0361ecst",

language = "English",

volume = "58",

pages = "361--365",

journal = "ECS Transactions",

issn = "1938-5862",

publisher = "Institute of Physics",

number = "7",

}

TY - JOUR

T1 - Improved characteristics for Metal-nGaSb Ohmic contact by using Indium Gallium Zinc Oxide (IGZO)

AU - Shin, Jeong Hun

AU - Jung, Hyun Wook

AU - Park, Jin Hong

PY - 2013

Y1 - 2013

N2 - We introduce an excellent Ohmic contact technique in n-type GaSb by using a thin (∼ 5 nm thick) Indium Gallium Zinc Oxide (IGZO), achieving a high on-current density of 6.804 A/cm3 and a low on/off-current ratio of 1.64 and also resolving Fermi level pinning problem near the valence band edge. A thin IGZO on n-type GaSb annealed at 500°C before metal deposition contributes to Ohmic contact formation because of two main causes; (1) InSb narrows the energy bandgap and (2) free Sb as traps induces tunneling current.

AB - We introduce an excellent Ohmic contact technique in n-type GaSb by using a thin (∼ 5 nm thick) Indium Gallium Zinc Oxide (IGZO), achieving a high on-current density of 6.804 A/cm3 and a low on/off-current ratio of 1.64 and also resolving Fermi level pinning problem near the valence band edge. A thin IGZO on n-type GaSb annealed at 500°C before metal deposition contributes to Ohmic contact formation because of two main causes; (1) InSb narrows the energy bandgap and (2) free Sb as traps induces tunneling current.

UR - https://www.scopus.com/pages/publications/84904873552

U2 - 10.1149/05807.0361ecst

DO - 10.1149/05807.0361ecst

M3 - Article

AN - SCOPUS:84904873552

SN - 1938-5862

VL - 58

SP - 361

EP - 365

JO - ECS Transactions

JF - ECS Transactions

IS - 7

ER -

Improved characteristics for Metal-nGaSb Ohmic contact by using Indium Gallium Zinc Oxide (IGZO)

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