Impact of STI gap-fill process deposited by HDP-CVD in flash memory

Hyoung Sun Park; Ki Yong Kim; Ok Cheon Hong; Hong Sig Kim; Haebum Lee; Kyu Pil Lee; In Soo Cho; Byoung Deog Choi

doi:10.1149/05805.0075ecst

Impact of STI gap-fill process deposited by HDP-CVD in flash memory

Hyoung Sun Park, Ki Yong Kim, Ok Cheon Hong, Hong Sig Kim, Haebum Lee, Kyu Pil Lee, In Soo Cho, Byoung Deog Choi

Department of Electronic and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

This paper presents an evaluation of different oxides for shallow trench isolation (STI) gap-filling in flash memory devices. We have investigated that plasma induced degradation mechanism of high density chemical vapor deposition (HDP-CVD) oxide compared to non-plasma TEOS+O₃ undoped silicate glass (USG) for STI gap-filling process. HDP-CVD has more hydrogen contents due to H⁺ penetration into underlying layer in plasma which generates more interface state density. Hydrogen depassivation model has been suggested to demonstrate the degradation mechanism of HDP-CVD device.

Original language	English
Pages (from-to)	75-79
Number of pages	5
Journal	ECS Transactions
Volume	58
Issue number	5
DOIs	https://doi.org/10.1149/05805.0075ecst
State	Published - 2013

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title = "Impact of STI gap-fill process deposited by HDP-CVD in flash memory",

abstract = "This paper presents an evaluation of different oxides for shallow trench isolation (STI) gap-filling in flash memory devices. We have investigated that plasma induced degradation mechanism of high density chemical vapor deposition (HDP-CVD) oxide compared to non-plasma TEOS+O3 undoped silicate glass (USG) for STI gap-filling process. HDP-CVD has more hydrogen contents due to H+ penetration into underlying layer in plasma which generates more interface state density. Hydrogen depassivation model has been suggested to demonstrate the degradation mechanism of HDP-CVD device.",

author = "Park, \{Hyoung Sun\} and Kim, \{Ki Yong\} and Hong, \{Ok Cheon\} and Kim, \{Hong Sig\} and Haebum Lee and Lee, \{Kyu Pil\} and Cho, \{In Soo\} and Choi, \{Byoung Deog\}",

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T1 - Impact of STI gap-fill process deposited by HDP-CVD in flash memory

AU - Park, Hyoung Sun

AU - Kim, Ki Yong

AU - Hong, Ok Cheon

AU - Kim, Hong Sig

AU - Lee, Haebum

AU - Lee, Kyu Pil

AU - Cho, In Soo

AU - Choi, Byoung Deog

PY - 2013

Y1 - 2013

N2 - This paper presents an evaluation of different oxides for shallow trench isolation (STI) gap-filling in flash memory devices. We have investigated that plasma induced degradation mechanism of high density chemical vapor deposition (HDP-CVD) oxide compared to non-plasma TEOS+O3 undoped silicate glass (USG) for STI gap-filling process. HDP-CVD has more hydrogen contents due to H+ penetration into underlying layer in plasma which generates more interface state density. Hydrogen depassivation model has been suggested to demonstrate the degradation mechanism of HDP-CVD device.

AB - This paper presents an evaluation of different oxides for shallow trench isolation (STI) gap-filling in flash memory devices. We have investigated that plasma induced degradation mechanism of high density chemical vapor deposition (HDP-CVD) oxide compared to non-plasma TEOS+O3 undoped silicate glass (USG) for STI gap-filling process. HDP-CVD has more hydrogen contents due to H+ penetration into underlying layer in plasma which generates more interface state density. Hydrogen depassivation model has been suggested to demonstrate the degradation mechanism of HDP-CVD device.

UR - https://www.scopus.com/pages/publications/84904877156

U2 - 10.1149/05805.0075ecst

DO - 10.1149/05805.0075ecst

M3 - Article

AN - SCOPUS:84904877156

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VL - 58

SP - 75

EP - 79

JO - ECS Transactions

JF - ECS Transactions

IS - 5

ER -

Impact of STI gap-fill process deposited by HDP-CVD in flash memory

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