Impact of STI gap-fill process deposited by HDP-CVD in flash memory

Hyoung Sun Park; Ki Yong Kim; Ok Cheon Hong; Hong Sig Kim; Haebum Lee; Kyu Pil Lee; In Soo Cho; Byoung Deog Choi

doi:10.1149/05805.0075ecst

Impact of STI gap-fill process deposited by HDP-CVD in flash memory

Hyoung Sun Park
, Ki Yong Kim
, Ok Cheon Hong
, Hong Sig Kim
, Haebum Lee
, Kyu Pil Lee
, In Soo Cho
, Byoung Deog Choi

Department of Electronic and Electrical Engineering

Samsung
Sungkyunkwan University

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

This paper presents an evaluation of different oxides for shallow trench isolation (STI) gap-filling in flash memory devices. We have investigated that plasma induced degradation mechanism of high density chemical vapor deposition (HDP-CVD) oxide compared to non-plasma TEOS+O₃ undoped silicate glass (USG) for STI gap-filling process. HDP-CVD has more hydrogen contents due to H⁺ penetration into underlying layer in plasma which generates more interface state density. Hydrogen depassivation model has been suggested to demonstrate the degradation mechanism of HDP-CVD device.

Original language	English
Pages (from-to)	75-79
Number of pages	5
Journal	ECS Transactions
Volume	58
Issue number	5
DOIs	https://doi.org/10.1149/05805.0075ecst
State	Published - 2013

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title = "Impact of STI gap-fill process deposited by HDP-CVD in flash memory",

abstract = "This paper presents an evaluation of different oxides for shallow trench isolation (STI) gap-filling in flash memory devices. We have investigated that plasma induced degradation mechanism of high density chemical vapor deposition (HDP-CVD) oxide compared to non-plasma TEOS+O3 undoped silicate glass (USG) for STI gap-filling process. HDP-CVD has more hydrogen contents due to H+ penetration into underlying layer in plasma which generates more interface state density. Hydrogen depassivation model has been suggested to demonstrate the degradation mechanism of HDP-CVD device.",

author = "Park, \{Hyoung Sun\} and Kim, \{Ki Yong\} and Hong, \{Ok Cheon\} and Kim, \{Hong Sig\} and Haebum Lee and Lee, \{Kyu Pil\} and Cho, \{In Soo\} and Choi, \{Byoung Deog\}",

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doi = "10.1149/05805.0075ecst",

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T1 - Impact of STI gap-fill process deposited by HDP-CVD in flash memory

AU - Park, Hyoung Sun

AU - Kim, Ki Yong

AU - Hong, Ok Cheon

AU - Kim, Hong Sig

AU - Lee, Haebum

AU - Lee, Kyu Pil

AU - Cho, In Soo

AU - Choi, Byoung Deog

PY - 2013

Y1 - 2013

N2 - This paper presents an evaluation of different oxides for shallow trench isolation (STI) gap-filling in flash memory devices. We have investigated that plasma induced degradation mechanism of high density chemical vapor deposition (HDP-CVD) oxide compared to non-plasma TEOS+O3 undoped silicate glass (USG) for STI gap-filling process. HDP-CVD has more hydrogen contents due to H+ penetration into underlying layer in plasma which generates more interface state density. Hydrogen depassivation model has been suggested to demonstrate the degradation mechanism of HDP-CVD device.

AB - This paper presents an evaluation of different oxides for shallow trench isolation (STI) gap-filling in flash memory devices. We have investigated that plasma induced degradation mechanism of high density chemical vapor deposition (HDP-CVD) oxide compared to non-plasma TEOS+O3 undoped silicate glass (USG) for STI gap-filling process. HDP-CVD has more hydrogen contents due to H+ penetration into underlying layer in plasma which generates more interface state density. Hydrogen depassivation model has been suggested to demonstrate the degradation mechanism of HDP-CVD device.

UR - https://www.scopus.com/pages/publications/84904877156

U2 - 10.1149/05805.0075ecst

DO - 10.1149/05805.0075ecst

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VL - 58

SP - 75

EP - 79

JO - ECS Transactions

JF - ECS Transactions

IS - 5

ER -

Impact of STI gap-fill process deposited by HDP-CVD in flash memory

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