Impact of lateral scaling on the electrical characteristics of AlGaN/GaN HEMTs

Hyun Wook Jung; Il Gyu Choi; Dohyun Kim; Sung Jae Chang; Ho Kyun Ahn; Jong Won Lim; Dong Min Kang; Sang Min Won

doi:10.4218/etrij.2025-0109

Impact of lateral scaling on the electrical characteristics of AlGaN/GaN HEMTs

Hyun Wook Jung
, Il Gyu Choi
, Dohyun Kim
, Sung Jae Chang
, Ho Kyun Ahn
, Jong Won Lim
, Dong Min Kang
, Sang Min Won

Research output: Contribution to journal › Article › peer-review

Abstract

This study systematically analyzes the effects of lateral scaling on the direct current (DC) and radio frequency (RF) characteristics of AlGaN/GaN high-electron-mobility transistors (HEMTs) by varying the geometric parameters gate length (L_G), gate width (W_G), number of fingers (N_F), source-to-gate distance (L_SG), and source-to-drain distance (L_SD). L_G scaling enhances transconductance (g_m) and cut-off frequency (f_T) but strengthens short-channel effects and reduces breakdown voltage (V_BR). Drain current (I_D) remains largely constant across varying W_G and N_F, but changes in these parameters significantly affect RF characteristics because of increased parasitic capacitance and gate resistance (R_G). A reduced L_SG enhances DC performance by increasing I_D and g_m but minimally impacts RF characteristics thanks to increased gate-to-source parasitic capacitance (C_gs). Decreasing L_SD significantly boosts f_T and maximum oscillation frequency (f_max) by reducing carrier transit time, but severely reduces V_BR by enhancing electric field concentration. These findings provide a detailed understanding of the geometric dependencies and offer design guidelines for optimizing DC and RF performance.

Original language	English
Journal	ETRI Journal
DOIs	https://doi.org/10.4218/etrij.2025-0109
State	Accepted/In press - 2025
Externally published	Yes

Keywords

DC and RF characteristics
GaN HEMT
geometry
lateral scaling
layout

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10.4218/etrij.2025-0109

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@article{2de066a0840e43009cc1df27dd52b4f8,

title = "Impact of lateral scaling on the electrical characteristics of AlGaN/GaN HEMTs",

abstract = "This study systematically analyzes the effects of lateral scaling on the direct current (DC) and radio frequency (RF) characteristics of AlGaN/GaN high-electron-mobility transistors (HEMTs) by varying the geometric parameters gate length (LG), gate width (WG), number of fingers (NF), source-to-gate distance (LSG), and source-to-drain distance (LSD). LG scaling enhances transconductance (gm) and cut-off frequency (fT) but strengthens short-channel effects and reduces breakdown voltage (VBR). Drain current (ID) remains largely constant across varying WG and NF, but changes in these parameters significantly affect RF characteristics because of increased parasitic capacitance and gate resistance (RG). A reduced LSG enhances DC performance by increasing ID and gm but minimally impacts RF characteristics thanks to increased gate-to-source parasitic capacitance (Cgs). Decreasing LSD significantly boosts fT and maximum oscillation frequency (fmax) by reducing carrier transit time, but severely reduces VBR by enhancing electric field concentration. These findings provide a detailed understanding of the geometric dependencies and offer design guidelines for optimizing DC and RF performance.",

keywords = "DC and RF characteristics, GaN HEMT, geometry, lateral scaling, layout",

author = "Jung, \{Hyun Wook\} and Choi, \{Il Gyu\} and Dohyun Kim and Chang, \{Sung Jae\} and Ahn, \{Ho Kyun\} and Lim, \{Jong Won\} and Kang, \{Dong Min\} and Won, \{Sang Min\}",

note = "Publisher Copyright: 1225-6463/\$ {\textcopyright} 2025 ETRI.",

year = "2025",

doi = "10.4218/etrij.2025-0109",

language = "English",

journal = "ETRI Journal",

issn = "1225-6463",

publisher = "John Wiley \& Sons Inc.",

}

TY - JOUR

T1 - Impact of lateral scaling on the electrical characteristics of AlGaN/GaN HEMTs

AU - Jung, Hyun Wook

AU - Choi, Il Gyu

AU - Kim, Dohyun

AU - Chang, Sung Jae

AU - Ahn, Ho Kyun

AU - Lim, Jong Won

AU - Kang, Dong Min

AU - Won, Sang Min

PY - 2025

Y1 - 2025

N2 - This study systematically analyzes the effects of lateral scaling on the direct current (DC) and radio frequency (RF) characteristics of AlGaN/GaN high-electron-mobility transistors (HEMTs) by varying the geometric parameters gate length (LG), gate width (WG), number of fingers (NF), source-to-gate distance (LSG), and source-to-drain distance (LSD). LG scaling enhances transconductance (gm) and cut-off frequency (fT) but strengthens short-channel effects and reduces breakdown voltage (VBR). Drain current (ID) remains largely constant across varying WG and NF, but changes in these parameters significantly affect RF characteristics because of increased parasitic capacitance and gate resistance (RG). A reduced LSG enhances DC performance by increasing ID and gm but minimally impacts RF characteristics thanks to increased gate-to-source parasitic capacitance (Cgs). Decreasing LSD significantly boosts fT and maximum oscillation frequency (fmax) by reducing carrier transit time, but severely reduces VBR by enhancing electric field concentration. These findings provide a detailed understanding of the geometric dependencies and offer design guidelines for optimizing DC and RF performance.

AB - This study systematically analyzes the effects of lateral scaling on the direct current (DC) and radio frequency (RF) characteristics of AlGaN/GaN high-electron-mobility transistors (HEMTs) by varying the geometric parameters gate length (LG), gate width (WG), number of fingers (NF), source-to-gate distance (LSG), and source-to-drain distance (LSD). LG scaling enhances transconductance (gm) and cut-off frequency (fT) but strengthens short-channel effects and reduces breakdown voltage (VBR). Drain current (ID) remains largely constant across varying WG and NF, but changes in these parameters significantly affect RF characteristics because of increased parasitic capacitance and gate resistance (RG). A reduced LSG enhances DC performance by increasing ID and gm but minimally impacts RF characteristics thanks to increased gate-to-source parasitic capacitance (Cgs). Decreasing LSD significantly boosts fT and maximum oscillation frequency (fmax) by reducing carrier transit time, but severely reduces VBR by enhancing electric field concentration. These findings provide a detailed understanding of the geometric dependencies and offer design guidelines for optimizing DC and RF performance.

KW - DC and RF characteristics

KW - GaN HEMT

KW - geometry

KW - lateral scaling

KW - layout

UR - https://www.scopus.com/pages/publications/105012632552

U2 - 10.4218/etrij.2025-0109

DO - 10.4218/etrij.2025-0109

M3 - Article

AN - SCOPUS:105012632552

SN - 1225-6463

JO - ETRI Journal

JF - ETRI Journal

ER -

Impact of lateral scaling on the electrical characteristics of AlGaN/GaN HEMTs

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