IGZO TFT gate driver circuit with large threshold voltage margin

This paper proposes a new gate driver circuit using depletion mode a-IGZO TFTs. The proposed gate driver circuit can prevent Q node, the gate node of pull-up TFT, from discharging during the output pulse duration. For that purpose, our circuit applies sufficient negative gate-to-source bias (V_gs) to the switch TFTs connected to the Q node during that time. Consequently, the leakage current through them is suppressed even though they have a negative threshold voltage (V_th). The proposed circuit has eleven transistors and two capacitors and it requires only two clock signals, which enables us to adopt the circuit at minimum extra cost. It works properly even when V_th is as low as −7.1 V. The normalized power consumption of the proposed circuit is also lowered compared with the previously reported circuits when the transistor has negative V_th. The power consumption of the proposed circuit for V_th of −5 V increases only nine times that for V_th of 3 V.