@inproceedings{22b9e4f9fb8549b0bc3129a237980807,
title = "IGZO TFT gate driver circuit capable of compensating threshold voltage shift for pull-down unit",
abstract = "This paper proposes the gate driver circuit which is able to compensate VTH shift for pull-down unit. Using 4T1C circuit configuration, we can improve the reliability of pull-down unit for continuous bias stress. In addition, a simplified circuit is obtained since Q and VOUT node share the same circuit configuration.",
keywords = "Compensation, Gate driver circuit, IGZO thin-film transistors, Pull-down unit, Threshold voltage shift",
author = "Jongsu Oh and Kim, \{Jin Ho\} and Lee, \{Kyeong Hyun\} and Ha, \{Eun Soo\} and Park, \{Kee Chan\} and Jeon, \{Jae Hong\} and Kim, \{Yong Sang\}",
note = "Publisher Copyright: {\textcopyright} 2018 International Display Workshops. All rights reserved.; 25th International Display Workshops, IDW 2018 ; Conference date: 12-12-2018 Through 14-12-2018",
year = "2018",
language = "English",
series = "Proceedings of the International Display Workshops",
publisher = "International Display Workshops",
pages = "343--345",
booktitle = "25th International Display Workshops, IDW 2018",
address = "Japan",
}