TY - JOUR
T1 - Hydrogenated amorphous silicon germanium active layer for top cell of a multi junction cell structure
AU - Cho, Jaehyun
AU - Iftiquar, S. M.
AU - Kim, Minbum
AU - Park, Jinjoo
AU - Jung, Junhee
AU - Kim, Jiwoong
AU - Yi, Junsin
N1 - Publisher Copyright:
Copyright © 2016 American Scientific Publishers All rights reserved.
PY - 2016/5
Y1 - 2016/5
N2 - Intrinsic hydrogenated amorphous silicon-germanium (a-SiGe:H) alloy is generally used in the bottom cell because of its low band gap. The a-SiGe:H has a higher photo conductivity in comparison to the a-Si:H; thus, it is expected that the a-SiGe:H can show better short circuit current density than that of the a-Si:H based solar cell. Therefore, we optimized a-SiGe:H active layer that can be a suitable choice for the front cell of a multi junction solar cell. Furthermore, we carried out a comparative study of the solar cells that have a-SiGe:H and a-Si:H as respective active layers. The a-SiGe:H based solar cells show higher short circuit current density, while the a-Si:H based cells show higher open circuit voltage. The current-voltage characteristics of these cells are as follows: (a) Voc = 770 mV, Jsc = 15.0 mA/cm2, FF = 64.5%, and η = 7.47% for a-SiGe:H based cell; and (b) Voc = 826 mV, Jsc = 13.63 mA/cm2, FF = 72.0%, and η = 8.1% for a-Si:H based cell.
AB - Intrinsic hydrogenated amorphous silicon-germanium (a-SiGe:H) alloy is generally used in the bottom cell because of its low band gap. The a-SiGe:H has a higher photo conductivity in comparison to the a-Si:H; thus, it is expected that the a-SiGe:H can show better short circuit current density than that of the a-Si:H based solar cell. Therefore, we optimized a-SiGe:H active layer that can be a suitable choice for the front cell of a multi junction solar cell. Furthermore, we carried out a comparative study of the solar cells that have a-SiGe:H and a-Si:H as respective active layers. The a-SiGe:H based solar cells show higher short circuit current density, while the a-Si:H based cells show higher open circuit voltage. The current-voltage characteristics of these cells are as follows: (a) Voc = 770 mV, Jsc = 15.0 mA/cm2, FF = 64.5%, and η = 7.47% for a-SiGe:H based cell; and (b) Voc = 826 mV, Jsc = 13.63 mA/cm2, FF = 72.0%, and η = 8.1% for a-Si:H based cell.
KW - a-SiGe:H
KW - Amorphous silicon solar cell
KW - Current density
KW - External quantum efficiency
KW - Low band gap
UR - https://www.scopus.com/pages/publications/84971505732
U2 - 10.1166/jnn.2016.12208
DO - 10.1166/jnn.2016.12208
M3 - Article
AN - SCOPUS:84971505732
SN - 1533-4880
VL - 16
SP - 4870
EP - 4874
JO - Journal of Nanoscience and Nanotechnology
JF - Journal of Nanoscience and Nanotechnology
IS - 5
ER -
