Hydrazine-based n-type doping process to modulate Dirac point of graphene and its application to complementary inverter

In Yeal Lee; Hyung Youl Park; Jin Hyung Park; Jinyeong Lee; Woo Shik Jung; Hyun Yong Yu; Sang Woo Kim; Gil Ho Kim; Jin Hong Park

doi:10.1016/j.orgel.2013.03.022

Hydrazine-based n-type doping process to modulate Dirac point of graphene and its application to complementary inverter

In Yeal Lee
, Hyung Youl Park
, Jin Hyung Park
, Jinyeong Lee
, Woo Shik Jung
, Hyun Yong Yu
, Sang Woo Kim
, Gil Ho Kim
, Jin Hong Park

Department of Electronic and Electrical Engineering

Sungkyunkwan University
Stanford University
Korea University

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

In this paper, chemical n-type doping process of graphene using hydrazine monohydrate solution (N₂H₄-H₂O) is demonstrated. This method successfully modulates the Dirac point of pristine graphene by adjusting the concentration of hydrazine solution and also provides an effective n-type doping in graphene. First, the hydrazine treated and pristine graphene films are systematically investigated by Raman and FT-IR spectroscopy. Second, with p- and n-channel FETs fabricated on both pristine and hydrazine treated n-type graphene, complementary graphene inverter is demonstrated.

Original language	English
Pages (from-to)	1586-1590
Number of pages	5
Journal	Organic Electronics
Volume	14
Issue number	6
DOIs	https://doi.org/10.1016/j.orgel.2013.03.022
State	Published - Jun 2013

Keywords

Graphene
Hydrazine
Inverter
N-doping

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10.1016/j.orgel.2013.03.022

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title = "Hydrazine-based n-type doping process to modulate Dirac point of graphene and its application to complementary inverter",

abstract = "In this paper, chemical n-type doping process of graphene using hydrazine monohydrate solution (N2H4-H2O) is demonstrated. This method successfully modulates the Dirac point of pristine graphene by adjusting the concentration of hydrazine solution and also provides an effective n-type doping in graphene. First, the hydrazine treated and pristine graphene films are systematically investigated by Raman and FT-IR spectroscopy. Second, with p- and n-channel FETs fabricated on both pristine and hydrazine treated n-type graphene, complementary graphene inverter is demonstrated.",

keywords = "Graphene, Hydrazine, Inverter, N-doping",

author = "Lee, \{In Yeal\} and Park, \{Hyung Youl\} and Park, \{Jin Hyung\} and Jinyeong Lee and Jung, \{Woo Shik\} and Yu, \{Hyun Yong\} and Kim, \{Sang Woo\} and Kim, \{Gil Ho\} and Park, \{Jin Hong\}",

year = "2013",

month = jun,

doi = "10.1016/j.orgel.2013.03.022",

language = "English",

volume = "14",

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journal = "Organic Electronics",

issn = "1566-1199",

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T1 - Hydrazine-based n-type doping process to modulate Dirac point of graphene and its application to complementary inverter

AU - Lee, In Yeal

AU - Park, Hyung Youl

AU - Park, Jin Hyung

AU - Lee, Jinyeong

AU - Jung, Woo Shik

AU - Yu, Hyun Yong

AU - Kim, Sang Woo

AU - Kim, Gil Ho

AU - Park, Jin Hong

PY - 2013/6

Y1 - 2013/6

N2 - In this paper, chemical n-type doping process of graphene using hydrazine monohydrate solution (N2H4-H2O) is demonstrated. This method successfully modulates the Dirac point of pristine graphene by adjusting the concentration of hydrazine solution and also provides an effective n-type doping in graphene. First, the hydrazine treated and pristine graphene films are systematically investigated by Raman and FT-IR spectroscopy. Second, with p- and n-channel FETs fabricated on both pristine and hydrazine treated n-type graphene, complementary graphene inverter is demonstrated.

AB - In this paper, chemical n-type doping process of graphene using hydrazine monohydrate solution (N2H4-H2O) is demonstrated. This method successfully modulates the Dirac point of pristine graphene by adjusting the concentration of hydrazine solution and also provides an effective n-type doping in graphene. First, the hydrazine treated and pristine graphene films are systematically investigated by Raman and FT-IR spectroscopy. Second, with p- and n-channel FETs fabricated on both pristine and hydrazine treated n-type graphene, complementary graphene inverter is demonstrated.

KW - Graphene

KW - Hydrazine

KW - Inverter

KW - N-doping

UR - https://www.scopus.com/pages/publications/84876189370

U2 - 10.1016/j.orgel.2013.03.022

DO - 10.1016/j.orgel.2013.03.022

M3 - Article

AN - SCOPUS:84876189370

SN - 1566-1199

VL - 14

SP - 1586

EP - 1590

JO - Organic Electronics

JF - Organic Electronics

IS - 6

ER -

Hydrazine-based n-type doping process to modulate Dirac point of graphene and its application to complementary inverter

Abstract

Keywords

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