Homogeneous molybdenum disulfide tunnel diode formed via chemical doping

Xiaochi Liu; Deshun Qu; Min Sup Choi; Changmin Lee; Hyoungsub Kim; Won Jong Yoo

doi:10.1063/1.5023695

Homogeneous molybdenum disulfide tunnel diode formed via chemical doping

Xiaochi Liu, Deshun Qu, Min Sup Choi, Changmin Lee, Hyoungsub Kim, Won Jong Yoo

Department of Advanced Materials Science and Engineering

Sungkyunkwan University

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

We report on a simple, controllable chemical doping method to fabricate a lateral homogeneous MoS₂ tunnel diode. MoS₂ was doped to degenerate n- (1.6 × 10¹³ cm^-2) and p-type (1.1 × 10¹³ cm^-2) by benzyl viologen and AuCl₃, respectively. The n- and p-doping can be patterned on the same MoS₂ flake, and the high doping concentration can be maintained by Al₂O₃ masking together with vacuum annealing. A forward rectifying p-n diode and a band-to-band tunneling induced backward rectifying diode were realized by modulating the doping concentration of both the n- and p-sides. Our approach is a universal stratagem to fabricate diverse 2D homogeneous diodes with various functions.

Original language	English
Article number	183103
Journal	Applied Physics Letters
Volume	112
Issue number	18
DOIs	https://doi.org/10.1063/1.5023695
State	Published - 30 Apr 2018

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title = "Homogeneous molybdenum disulfide tunnel diode formed via chemical doping",

abstract = "We report on a simple, controllable chemical doping method to fabricate a lateral homogeneous MoS2 tunnel diode. MoS2 was doped to degenerate n- (1.6 × 1013 cm-2) and p-type (1.1 × 1013 cm-2) by benzyl viologen and AuCl3, respectively. The n- and p-doping can be patterned on the same MoS2 flake, and the high doping concentration can be maintained by Al2O3 masking together with vacuum annealing. A forward rectifying p-n diode and a band-to-band tunneling induced backward rectifying diode were realized by modulating the doping concentration of both the n- and p-sides. Our approach is a universal stratagem to fabricate diverse 2D homogeneous diodes with various functions.",

author = "Xiaochi Liu and Deshun Qu and Choi, \{Min Sup\} and Changmin Lee and Hyoungsub Kim and Yoo, \{Won Jong\}",

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doi = "10.1063/1.5023695",

language = "English",

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T1 - Homogeneous molybdenum disulfide tunnel diode formed via chemical doping

AU - Liu, Xiaochi

AU - Qu, Deshun

AU - Choi, Min Sup

AU - Lee, Changmin

AU - Kim, Hyoungsub

AU - Yoo, Won Jong

PY - 2018/4/30

Y1 - 2018/4/30

N2 - We report on a simple, controllable chemical doping method to fabricate a lateral homogeneous MoS2 tunnel diode. MoS2 was doped to degenerate n- (1.6 × 1013 cm-2) and p-type (1.1 × 1013 cm-2) by benzyl viologen and AuCl3, respectively. The n- and p-doping can be patterned on the same MoS2 flake, and the high doping concentration can be maintained by Al2O3 masking together with vacuum annealing. A forward rectifying p-n diode and a band-to-band tunneling induced backward rectifying diode were realized by modulating the doping concentration of both the n- and p-sides. Our approach is a universal stratagem to fabricate diverse 2D homogeneous diodes with various functions.

AB - We report on a simple, controllable chemical doping method to fabricate a lateral homogeneous MoS2 tunnel diode. MoS2 was doped to degenerate n- (1.6 × 1013 cm-2) and p-type (1.1 × 1013 cm-2) by benzyl viologen and AuCl3, respectively. The n- and p-doping can be patterned on the same MoS2 flake, and the high doping concentration can be maintained by Al2O3 masking together with vacuum annealing. A forward rectifying p-n diode and a band-to-band tunneling induced backward rectifying diode were realized by modulating the doping concentration of both the n- and p-sides. Our approach is a universal stratagem to fabricate diverse 2D homogeneous diodes with various functions.

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IS - 18

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Homogeneous molybdenum disulfide tunnel diode formed via chemical doping

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