Homoepitaxial growth of iron-doped 4H-SIC by using bis- trimethylsilylmethane and ferrocene precursors

In this paper, we attempted to grow semi-insulating SiC epitaxial layer by in-situ iron doping. Homoepitaxial growth of iron-doped 4H-SiC layer was performed by MOCVD by using organosilicon precursor, bis-trimethylsilylmethane (BTMSM, [C ₇H ₂₀Si ₂]) and metal-organic precursor, bis-cyclopentadienyliron (Ferrocene, [C ₁₀H ₁₀Fe]), The crystal quality of the epilayer was not degraded significantly, despite Fe doping, in that no changes were observed in RMS roughness and FWHM of the X-ray rocking curve. From I-V and C-V measurements, it is shown that the residual donor concentration of the epilayer was decreased by more than two orders of magnitude after Fe doping. Moreover, photoluminescence spectra showed similar results to V-doped semi-insulating SiC substrate. From these results, it is proposed that Fe effectively acts as a compensation center in the in-situ iron-doped 4H-SiC.