Homoepitaxial growth of iron-doped 4H-SiC by bis-trimethylsilylmethane and ferrocene precursors for semi-insulating SiC

Ho Keun Song; Jae Kyeong Jeong; Soo Gil Kim; Myung Yoon Um; Hoon Joo Na; Sang Yong Jung; Han Seok Seo; Jeong Hyuk Yim; Jae Bin Lee; Hyeong Joon Kim

Homoepitaxial growth of iron-doped 4H-SiC by bis-trimethylsilylmethane and ferrocene precursors for semi-insulating SiC

Ho Keun Song, Jae Kyeong Jeong, Soo Gil Kim, Myung Yoon Um, Hoon Joo Na, Sang Yong Jung, Han Seok Seo, Jeong Hyuk Yim, Jae Bin Lee, Hyeong Joon Kim

Research output: Contribution to conference › Paper › peer-review

Abstract

In this paper, we attempted to grow semi-insulating SiC epitaxial layer by in-situ iron doping for the first time. Homoepitaxial growth of iron-doped 4H-SiC layer was performed by MOCVD using organosilicon precursor, bis-trimethylsilylmethane (BTMSM, [C₇H₂₀Si₂]) and metal organic precursor, bis-cyclopentadienyliron (Ferrocene, [C ₁₀H₁₀Fe]). The crystal quality of epilayer was not degraded significantly despite of the Fe doping in that no changes were observed in rms roughness and FWHM of X-ray rocking curve. To evaluate a resistivity of epilayer, background donor concentration was measured and it was decreased by one order of magnitude after Fe doping. From this result, it is supposed that Fe could effectively act as a compensation center in the in-situ iron-doped 4H-SiC.

Original language	English
Pages	582-586
Number of pages	5
State	Published - 2004
Externally published	Yes
Event	State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia - Honolulu, HI, United States Duration: 3 Oct 2004 → 8 Oct 2004

Conference

Conference	State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia
Country/Territory	United States
City	Honolulu, HI
Period	3/10/04 → 8/10/04

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Song, H. K., Jeong, J. K., Kim, S. G., Um, M. Y., Na, H. J., Jung, S. Y., Seo, H. S., Yim, J. H., Lee, J. B., & Kim, H. J. (2004). Homoepitaxial growth of iron-doped 4H-SiC by bis-trimethylsilylmethane and ferrocene precursors for semi-insulating SiC. 582-586. Paper presented at State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia, Honolulu, HI, United States.

Song, Ho Keun ; Jeong, Jae Kyeong ; Kim, Soo Gil et al. / Homoepitaxial growth of iron-doped 4H-SiC by bis-trimethylsilylmethane and ferrocene precursors for semi-insulating SiC. Paper presented at State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia, Honolulu, HI, United States.5 p.

@conference{a9c88018a1e743cd96330c6f26581225,

title = "Homoepitaxial growth of iron-doped 4H-SiC by bis-trimethylsilylmethane and ferrocene precursors for semi-insulating SiC",

abstract = "In this paper, we attempted to grow semi-insulating SiC epitaxial layer by in-situ iron doping for the first time. Homoepitaxial growth of iron-doped 4H-SiC layer was performed by MOCVD using organosilicon precursor, bis-trimethylsilylmethane (BTMSM, [C7H20Si2]) and metal organic precursor, bis-cyclopentadienyliron (Ferrocene, [C 10H10Fe]). The crystal quality of epilayer was not degraded significantly despite of the Fe doping in that no changes were observed in rms roughness and FWHM of X-ray rocking curve. To evaluate a resistivity of epilayer, background donor concentration was measured and it was decreased by one order of magnitude after Fe doping. From this result, it is supposed that Fe could effectively act as a compensation center in the in-situ iron-doped 4H-SiC.",

author = "Song, \{Ho Keun\} and Jeong, \{Jae Kyeong\} and Kim, \{Soo Gil\} and Um, \{Myung Yoon\} and Na, \{Hoon Joo\} and Jung, \{Sang Yong\} and Seo, \{Han Seok\} and Yim, \{Jeong Hyuk\} and Lee, \{Jae Bin\} and Kim, \{Hyeong Joon\}",

year = "2004",

language = "English",

pages = "582--586",

note = "State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia ; Conference date: 03-10-2004 Through 08-10-2004",

}

Song, HK, Jeong, JK, Kim, SG, Um, MY, Na, HJ, Jung, SY, Seo, HS, Yim, JH, Lee, JB & Kim, HJ 2004, 'Homoepitaxial growth of iron-doped 4H-SiC by bis-trimethylsilylmethane and ferrocene precursors for semi-insulating SiC', Paper presented at State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia, Honolulu, HI, United States, 3/10/04 - 8/10/04 pp. 582-586.

Homoepitaxial growth of iron-doped 4H-SiC by bis-trimethylsilylmethane and ferrocene precursors for semi-insulating SiC. / Song, Ho Keun; Jeong, Jae Kyeong; Kim, Soo Gil et al.
2004. 582-586 Paper presented at State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia, Honolulu, HI, United States.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Homoepitaxial growth of iron-doped 4H-SiC by bis-trimethylsilylmethane and ferrocene precursors for semi-insulating SiC

AU - Song, Ho Keun

AU - Jeong, Jae Kyeong

AU - Kim, Soo Gil

AU - Um, Myung Yoon

AU - Na, Hoon Joo

AU - Jung, Sang Yong

AU - Seo, Han Seok

AU - Yim, Jeong Hyuk

AU - Lee, Jae Bin

AU - Kim, Hyeong Joon

PY - 2004

Y1 - 2004

N2 - In this paper, we attempted to grow semi-insulating SiC epitaxial layer by in-situ iron doping for the first time. Homoepitaxial growth of iron-doped 4H-SiC layer was performed by MOCVD using organosilicon precursor, bis-trimethylsilylmethane (BTMSM, [C7H20Si2]) and metal organic precursor, bis-cyclopentadienyliron (Ferrocene, [C 10H10Fe]). The crystal quality of epilayer was not degraded significantly despite of the Fe doping in that no changes were observed in rms roughness and FWHM of X-ray rocking curve. To evaluate a resistivity of epilayer, background donor concentration was measured and it was decreased by one order of magnitude after Fe doping. From this result, it is supposed that Fe could effectively act as a compensation center in the in-situ iron-doped 4H-SiC.

AB - In this paper, we attempted to grow semi-insulating SiC epitaxial layer by in-situ iron doping for the first time. Homoepitaxial growth of iron-doped 4H-SiC layer was performed by MOCVD using organosilicon precursor, bis-trimethylsilylmethane (BTMSM, [C7H20Si2]) and metal organic precursor, bis-cyclopentadienyliron (Ferrocene, [C 10H10Fe]). The crystal quality of epilayer was not degraded significantly despite of the Fe doping in that no changes were observed in rms roughness and FWHM of X-ray rocking curve. To evaluate a resistivity of epilayer, background donor concentration was measured and it was decreased by one order of magnitude after Fe doping. From this result, it is supposed that Fe could effectively act as a compensation center in the in-situ iron-doped 4H-SiC.

UR - https://www.scopus.com/pages/publications/20244382573

M3 - Paper

AN - SCOPUS:20244382573

SP - 582

EP - 586

T2 - State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia

Y2 - 3 October 2004 through 8 October 2004

ER -

Song HK, Jeong JK, Kim SG, Um MY, Na HJ, Jung SY et al.. Homoepitaxial growth of iron-doped 4H-SiC by bis-trimethylsilylmethane and ferrocene precursors for semi-insulating SiC. 2004. Paper presented at State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia, Honolulu, HI, United States.

Homoepitaxial growth of iron-doped 4H-SiC by bis-trimethylsilylmethane and ferrocene precursors for semi-insulating SiC

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