@inproceedings{b0a514a01db0440585ffda8a4196f7cc,
title = "Hole gas induced by defects in Ge/Si core-shell nanowires",
abstract = "We investigate the defect levels of surface Si dangling bond (DB) and substitutional Au defects at/near the surfaces of Ge/Si core-shell nanowires through spin-polarized density-functional calculations. Both surface Si DB and substitutional Au defects induce hole carriers in the Ge core by trapping electrons from the valence band maximum state. The reduced scattering by spatial separation of hole carriers and charge traps leads to the ballistic transport in core-shell nanowire structures.",
keywords = "Au impurity, Core-shell nanowire, dangling bond defect, electronic structure",
author = "Park, \{J. S.\} and B. Ryu and Moon, \{C. Y.\} and Chang, \{K. J.\}",
year = "2011",
doi = "10.1063/1.3666374",
language = "English",
isbn = "9780735410022",
series = "AIP Conference Proceedings",
pages = "303--304",
booktitle = "Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30",
note = "30th International Conference on the Physics of Semiconductors, ICPS-30 ; Conference date: 25-07-2010 Through 30-07-2010",
}