Hole barrier height reduction in inverted quantum-dot light-emitting diodes with vanadium(V) oxide/poly(N-vinylcarbazole) hole transport layer

Young Ran Park; Won Kook Choi; Young Joon Hong

doi:10.1063/1.5040099

Hole barrier height reduction in inverted quantum-dot light-emitting diodes with vanadium(V) oxide/poly(N-vinylcarbazole) hole transport layer

Young Ran Park, Won Kook Choi, Young Joon Hong

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

This study demonstrates superior electrical and electroluminescence performance of inverted quantum-dot light-emitting diodes (QD-LEDs) with a V₂O₅/poly(N-vinylcarbazole) (PVK) hole conduction layer. Hole- and electron-only device measurements reveal a more balanced charge carrier injection as well as the higher hole conduction capability in the inverted QD-LED than the standard one. Smooth stepwise hole conduction energy levels with a remarkably reduced hole barrier height (Δh) from 1.74 to 0.89 eV at QD/PVK are found to be responsible for high hole conduction and high luminous efficiency in the inverted QD-LED, which is validated by ultraviolet photoelectron spectroscopy measurements. The down-shifted electronic energy levels of PVK for reducing the Δh are discussed from the point of view of molecular orientation of PVK governed by interfacial atomic interaction with underlayers of V₂O₅ and QD for standard and inverted device structures, respectively.

Original language	English
Article number	043301
Journal	Applied Physics Letters
Volume	113
Issue number	4
DOIs	https://doi.org/10.1063/1.5040099
State	Published - 23 Jul 2018
Externally published	Yes

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title = "Hole barrier height reduction in inverted quantum-dot light-emitting diodes with vanadium(V) oxide/poly(N-vinylcarbazole) hole transport layer",

abstract = "This study demonstrates superior electrical and electroluminescence performance of inverted quantum-dot light-emitting diodes (QD-LEDs) with a V2O5/poly(N-vinylcarbazole) (PVK) hole conduction layer. Hole- and electron-only device measurements reveal a more balanced charge carrier injection as well as the higher hole conduction capability in the inverted QD-LED than the standard one. Smooth stepwise hole conduction energy levels with a remarkably reduced hole barrier height (Δh) from 1.74 to 0.89 eV at QD/PVK are found to be responsible for high hole conduction and high luminous efficiency in the inverted QD-LED, which is validated by ultraviolet photoelectron spectroscopy measurements. The down-shifted electronic energy levels of PVK for reducing the Δh are discussed from the point of view of molecular orientation of PVK governed by interfacial atomic interaction with underlayers of V2O5 and QD for standard and inverted device structures, respectively.",

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doi = "10.1063/1.5040099",

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AU - Park, Young Ran

AU - Choi, Won Kook

AU - Hong, Young Joon

PY - 2018/7/23

Y1 - 2018/7/23

N2 - This study demonstrates superior electrical and electroluminescence performance of inverted quantum-dot light-emitting diodes (QD-LEDs) with a V2O5/poly(N-vinylcarbazole) (PVK) hole conduction layer. Hole- and electron-only device measurements reveal a more balanced charge carrier injection as well as the higher hole conduction capability in the inverted QD-LED than the standard one. Smooth stepwise hole conduction energy levels with a remarkably reduced hole barrier height (Δh) from 1.74 to 0.89 eV at QD/PVK are found to be responsible for high hole conduction and high luminous efficiency in the inverted QD-LED, which is validated by ultraviolet photoelectron spectroscopy measurements. The down-shifted electronic energy levels of PVK for reducing the Δh are discussed from the point of view of molecular orientation of PVK governed by interfacial atomic interaction with underlayers of V2O5 and QD for standard and inverted device structures, respectively.

AB - This study demonstrates superior electrical and electroluminescence performance of inverted quantum-dot light-emitting diodes (QD-LEDs) with a V2O5/poly(N-vinylcarbazole) (PVK) hole conduction layer. Hole- and electron-only device measurements reveal a more balanced charge carrier injection as well as the higher hole conduction capability in the inverted QD-LED than the standard one. Smooth stepwise hole conduction energy levels with a remarkably reduced hole barrier height (Δh) from 1.74 to 0.89 eV at QD/PVK are found to be responsible for high hole conduction and high luminous efficiency in the inverted QD-LED, which is validated by ultraviolet photoelectron spectroscopy measurements. The down-shifted electronic energy levels of PVK for reducing the Δh are discussed from the point of view of molecular orientation of PVK governed by interfacial atomic interaction with underlayers of V2O5 and QD for standard and inverted device structures, respectively.

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JF - Applied Physics Letters

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Hole barrier height reduction in inverted quantum-dot light-emitting diodes with vanadium(V) oxide/poly(N-vinylcarbazole) hole transport layer

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