Highly strained si pFinFET on SiC with good control of sub-fin leakage and self-heating

Investigating of ON-current boosting, short channel effect (SCE), and self-heating effect in Si pFinFET on a SiC stress relaxed buffer (SRB) layer is presented compared with SiGe pFinFET on a SiGe-SRB. Both SiC-SRB-based device and SiGe-SRB-based device show mobility boosting due to high compressive channel stress as well as enhanced SCE due to significant suppressing of subfin leakage. However, if self-heating is considered, SiGe-based devices exhibit non-negligible current degradation compared to SiC-SRB-based devices. Even though SiGe channel devices on a SiGe-SRB show better performance compared with SiC-SRB-based device, it is shown that the impact of BEOL reliability should be considered carefully.