TY - GEN
T1 - Highly sensitive CMOS passive wake-up circuit
AU - Cho, Hanjin
AU - Kim, Hyungchul
AU - Xi, Yao
AU - Kim, Minsu
AU - Kwon, Sungwook
AU - Park, Tajun
AU - Kim, Haksun
AU - Yang, Youngoo
PY - 2008
Y1 - 2008
N2 - We implement a passive wake-up circuit with high voltage sensitivity using standard CMOS technology. We propose voltage multipliers and inverter chain optimized for high voltage sensitivity. The wake-up circuit converts small RF input signals into a DC signal to trigger the interrupt. Using an RF input signal, whose center frequency is 870MHz and input power is-29.3dBm, we achieved an output voltage of 0.7V, enough to trigger on the output. The fully integrated CMOS IC is fabricated using a 0.18μm standard CMOS process. The chip area is as small as 230X190μm2.
AB - We implement a passive wake-up circuit with high voltage sensitivity using standard CMOS technology. We propose voltage multipliers and inverter chain optimized for high voltage sensitivity. The wake-up circuit converts small RF input signals into a DC signal to trigger the interrupt. Using an RF input signal, whose center frequency is 870MHz and input power is-29.3dBm, we achieved an output voltage of 0.7V, enough to trigger on the output. The fully integrated CMOS IC is fabricated using a 0.18μm standard CMOS process. The chip area is as small as 230X190μm2.
UR - https://www.scopus.com/pages/publications/69649100216
U2 - 10.1109/APMC.2008.4958344
DO - 10.1109/APMC.2008.4958344
M3 - Conference contribution
AN - SCOPUS:69649100216
SN - 9781424426423
T3 - Proceedings of 2008 Asia Pacific Microwave Conference, APMC 2008
BT - Proceedings of 2008 Asia Pacific Microwave Conference, APMC 2008
T2 - 2008 Asia Pacific Microwave Conference, APMC 2008
Y2 - 16 December 2008 through 20 December 2008
ER -