Highly selective dry etching of alternating phase-shift mask (PSM) structures for extreme ultraviolet lithography (EUVL) using inductively coupled plasmas (ICP)

H. Y. Jung; Y. R. Park; H. J. Lee; N. E. Lee; C. Y. Jeong; Jinho Ahn

doi:10.1016/j.tsf.2009.01.119

Highly selective dry etching of alternating phase-shift mask (PSM) structures for extreme ultraviolet lithography (EUVL) using inductively coupled plasmas (ICP)

H. Y. Jung, Y. R. Park, H. J. Lee, N. E. Lee, C. Y. Jeong, Jinho Ahn

Department of Advanced Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Extreme ultraviolet lithography (EUVL) is the most promising candidate for next generation lithography due to its feature size of 32 nm or below. We investigated the etching properties of materials in an alternating, phase-shift mask (PSM) structure for EUVL, including a Ru top capping layer, Mo-Si multilayer (ML) and Ni etch stop layer (ESL), by varying the Cl₂/O₂ and Cl₂/Ar gas flow ratios, and the dc self-bias voltage (V_dc) in inductively coupled plasma (ICP). The Ru layer could be etched effectively in Cl₂/O₂ plasmas and Mo-Si ML could be etched with an infinitely high etch selectivity over Ni ESL in Cl₂/Ar plasmas, even with increasing overetch time.

Original language	English
Pages (from-to)	3938-3941
Number of pages	4
Journal	Thin Solid Films
Volume	517
Issue number	14
DOIs	https://doi.org/10.1016/j.tsf.2009.01.119
State	Published - 29 May 2009

Keywords

Alternating phase-shift mask (PSM)
Extreme ultraviolet lithography (EUVL) mask
Inductively coupled plasma (ICP)
Plasma etching

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10.1016/j.tsf.2009.01.119

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title = "Highly selective dry etching of alternating phase-shift mask (PSM) structures for extreme ultraviolet lithography (EUVL) using inductively coupled plasmas (ICP)",

abstract = "Extreme ultraviolet lithography (EUVL) is the most promising candidate for next generation lithography due to its feature size of 32 nm or below. We investigated the etching properties of materials in an alternating, phase-shift mask (PSM) structure for EUVL, including a Ru top capping layer, Mo-Si multilayer (ML) and Ni etch stop layer (ESL), by varying the Cl2/O2 and Cl2/Ar gas flow ratios, and the dc self-bias voltage (Vdc) in inductively coupled plasma (ICP). The Ru layer could be etched effectively in Cl2/O2 plasmas and Mo-Si ML could be etched with an infinitely high etch selectivity over Ni ESL in Cl2/Ar plasmas, even with increasing overetch time.",

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doi = "10.1016/j.tsf.2009.01.119",

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AU - Jung, H. Y.

AU - Park, Y. R.

AU - Lee, H. J.

AU - Lee, N. E.

AU - Jeong, C. Y.

AU - Ahn, Jinho

PY - 2009/5/29

Y1 - 2009/5/29

N2 - Extreme ultraviolet lithography (EUVL) is the most promising candidate for next generation lithography due to its feature size of 32 nm or below. We investigated the etching properties of materials in an alternating, phase-shift mask (PSM) structure for EUVL, including a Ru top capping layer, Mo-Si multilayer (ML) and Ni etch stop layer (ESL), by varying the Cl2/O2 and Cl2/Ar gas flow ratios, and the dc self-bias voltage (Vdc) in inductively coupled plasma (ICP). The Ru layer could be etched effectively in Cl2/O2 plasmas and Mo-Si ML could be etched with an infinitely high etch selectivity over Ni ESL in Cl2/Ar plasmas, even with increasing overetch time.

AB - Extreme ultraviolet lithography (EUVL) is the most promising candidate for next generation lithography due to its feature size of 32 nm or below. We investigated the etching properties of materials in an alternating, phase-shift mask (PSM) structure for EUVL, including a Ru top capping layer, Mo-Si multilayer (ML) and Ni etch stop layer (ESL), by varying the Cl2/O2 and Cl2/Ar gas flow ratios, and the dc self-bias voltage (Vdc) in inductively coupled plasma (ICP). The Ru layer could be etched effectively in Cl2/O2 plasmas and Mo-Si ML could be etched with an infinitely high etch selectivity over Ni ESL in Cl2/Ar plasmas, even with increasing overetch time.

KW - Alternating phase-shift mask (PSM)

KW - Extreme ultraviolet lithography (EUVL) mask

KW - Inductively coupled plasma (ICP)

KW - Plasma etching

UR - https://www.scopus.com/pages/publications/65449150483

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DO - 10.1016/j.tsf.2009.01.119

M3 - Article

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SN - 0040-6090

VL - 517

SP - 3938

EP - 3941

JO - Thin Solid Films

JF - Thin Solid Films

IS - 14

ER -

Highly selective dry etching of alternating phase-shift mask (PSM) structures for extreme ultraviolet lithography (EUVL) using inductively coupled plasmas (ICP)

Abstract

Keywords

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