Highly Linear 2.6 GHz Band InGaP/GaAs HBT Power Amplifier IC Using a Dynamic Predistorter

This paper presents a highly linear two-stage InGaP/GaAs power amplifier integrated circuit (PAIC) using a dynamic predistorter for 5G small-cell applications. The proposed predistorter, based on a diode-connected transistor, utilizes a supply voltage to accurately control the linearization characteristics by adjusting its dc current. It is connected in parallel with an inter-stage of the two-stage PAIC through a series configuration of a resistor and an inductor, and features a shunt capacitor at the base of the transistor. These passive components have been optimized to enhance the linearization performance by managing the RF signal’s coupling to the diode. Using these optimized components, the AM−AM and AM−PM nonlinearities arising from the nonlinear resistance and capacitance in the diode can be effectively used to significantly flatten the AM−AM and AM−PM characteristics of the PAIC. The proposed predistorter was applied to the 2.6 GHz two-stage InGaP/GaAs HBT PAIC. The IC was tested using a 5 × 5 mm² module package based on a four-layer laminate. The load network was implemented off-chip on the laminate. By employing a continuous-wave (CW) signal, the AM−AM and AM−PM characteristics at 2.55–2.65 GHz were improved by approximately 0.05 dB and 3°, respectively. When utilizing the new radio (NR) signal, based on OFDM cyclic prefix (CP) with a signal bandwidth of 100 MHz and a peak-to-average power ratio (PAPR) of 9.7 dB, the power-added efficiency (PAE) reached at least 11.8%, and the average output power was no less than 24 dBm, achieving an adjacent channel leakage power ratio (ACLR) of −40.0 dBc.