Highly efficient silver patterning without photo-resist using simple silver precursors

Highly efficient method for silver patterning without photo-resist was developed by using high photosensitive organo-silver precursors, which were prepared by a simple reaction of silver salts and excess of amines. The FT-IR and GC-MS spectra were recorded depending on UV exposure time, for (n-PrNH ₂)Ag(NO₃)·0.5MeCN and (n-PrNH ₂)Ag(NO₂)·0.5MeCN, to understand the photolysis mechanism. The results indicate not only dissociation of coordinated amine and acetonitrile, but also decomposition of corresponding anion upon UV irradiation. When a precursor thin film was exposed to broadband UV irradiation, a partially reduced and insoluble silver species were formed within several minutes. After development, the irradiated areas were treated with a reducing agent to obtain pure metallic patterns. Subsequently, annealing step was followed at 100-350 °C to increase the adhesion of interface and cohesion of silver particles. The line resolution of 5 μm was obtained by the present silver precursors. Film thickness was also controllable from 50 to 250 nm by repetition of the above procedure. The average electrical conductivity was in the range of 3-43 Ω cm, measured by four-point probe technique. AES depth profile of the silver pattern thus obtained showed carbon and oxygen contents are less than 1% through the whole range. Even though sulfur contaminant exists on the surface, it was believed that nearly pure silver pattern was generated.