Highly Efficient Self-Curing Method in MOSFET Using Parasitic Bipolar Junction Transistor

Wonjun Shin; Ryun Han Koo; Seongbin Hong; Dongseok Kwon; Joon Hwang; Byung Gook Park; Jong Ho Lee

doi:10.1109/LED.2022.3176238

Highly Efficient Self-Curing Method in MOSFET Using Parasitic Bipolar Junction Transistor

Wonjun Shin
, Ryun Han Koo
, Seongbin Hong
, Dongseok Kwon
, Joon Hwang
, Byung Gook Park
, Jong Ho Lee

Seoul National University

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

We propose a hybrid self-curing method based on the parasitic bipolar junction transistor (PBJT) inherent to metal-oxide-semiconductor field-effect transistor (MOSFET). The PBJT utilizes the positive feedback of impact ionization to flow a large current close to the channel, generating Joule heat. Unlike conventional self-curing methods, the PBJT-based self-curing recovers the damaged gate oxide along the lateral dimension of the entire channel. The effects of the hybrid curing are quantitatively verified by low-frequency noise spectroscopy and charge pumping method.

Original language	English
Pages (from-to)	1001-1004
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	43
Issue number	7
DOIs	https://doi.org/10.1109/LED.2022.3176238
State	Published - 1 Jul 2022
Externally published	Yes

Keywords

Charge pumping (CP)
Joule heat (JH)
low-frequency noise (LFN)
parasitic bipolar junction transistor (PBJT)
self-curing

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10.1109/LED.2022.3176238

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@article{bde39c05b8c547d79327f7bb565b17b6,

title = "Highly Efficient Self-Curing Method in MOSFET Using Parasitic Bipolar Junction Transistor",

abstract = "We propose a hybrid self-curing method based on the parasitic bipolar junction transistor (PBJT) inherent to metal-oxide-semiconductor field-effect transistor (MOSFET). The PBJT utilizes the positive feedback of impact ionization to flow a large current close to the channel, generating Joule heat. Unlike conventional self-curing methods, the PBJT-based self-curing recovers the damaged gate oxide along the lateral dimension of the entire channel. The effects of the hybrid curing are quantitatively verified by low-frequency noise spectroscopy and charge pumping method.",

keywords = "Charge pumping (CP), Joule heat (JH), low-frequency noise (LFN), parasitic bipolar junction transistor (PBJT), self-curing",

author = "Wonjun Shin and Koo, \{Ryun Han\} and Seongbin Hong and Dongseok Kwon and Joon Hwang and Park, \{Byung Gook\} and Lee, \{Jong Ho\}",

note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

year = "2022",

month = jul,

day = "1",

doi = "10.1109/LED.2022.3176238",

language = "English",

volume = "43",

pages = "1001--1004",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "7",

}

TY - JOUR

T1 - Highly Efficient Self-Curing Method in MOSFET Using Parasitic Bipolar Junction Transistor

AU - Shin, Wonjun

AU - Koo, Ryun Han

AU - Hong, Seongbin

AU - Kwon, Dongseok

AU - Hwang, Joon

AU - Park, Byung Gook

AU - Lee, Jong Ho

PY - 2022/7/1

Y1 - 2022/7/1

N2 - We propose a hybrid self-curing method based on the parasitic bipolar junction transistor (PBJT) inherent to metal-oxide-semiconductor field-effect transistor (MOSFET). The PBJT utilizes the positive feedback of impact ionization to flow a large current close to the channel, generating Joule heat. Unlike conventional self-curing methods, the PBJT-based self-curing recovers the damaged gate oxide along the lateral dimension of the entire channel. The effects of the hybrid curing are quantitatively verified by low-frequency noise spectroscopy and charge pumping method.

AB - We propose a hybrid self-curing method based on the parasitic bipolar junction transistor (PBJT) inherent to metal-oxide-semiconductor field-effect transistor (MOSFET). The PBJT utilizes the positive feedback of impact ionization to flow a large current close to the channel, generating Joule heat. Unlike conventional self-curing methods, the PBJT-based self-curing recovers the damaged gate oxide along the lateral dimension of the entire channel. The effects of the hybrid curing are quantitatively verified by low-frequency noise spectroscopy and charge pumping method.

KW - Charge pumping (CP)

KW - Joule heat (JH)

KW - low-frequency noise (LFN)

KW - parasitic bipolar junction transistor (PBJT)

KW - self-curing

UR - https://www.scopus.com/pages/publications/85130427976

U2 - 10.1109/LED.2022.3176238

DO - 10.1109/LED.2022.3176238

M3 - Article

AN - SCOPUS:85130427976

SN - 0741-3106

VL - 43

SP - 1001

EP - 1004

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 7

ER -

Highly Efficient Self-Curing Method in MOSFET Using Parasitic Bipolar Junction Transistor

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Keywords

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