Highly air-stable phosphorus-doped n-type graphene field-effect transistors

Surajit Some; Jangah Kim; Keunsik Lee; Atul Kulkarni; Yeoheung Yoon; Saemi Lee; Taesung Kim; Hyoyoung Lee

doi:10.1002/adma.201202255

Highly air-stable phosphorus-doped n-type graphene field-effect transistors

Surajit Some
, Jangah Kim
, Keunsik Lee
, Atul Kulkarni
, Yeoheung Yoon
, Saemi Lee
, Taesung Kim
, Hyoyoung Lee

Department of Chemistry

Sungkyunkwan University

Research output: Contribution to journal › Article › peer-review

213 Scopus citations

Abstract

Phosphorus-doped double-layered graphene field-effect transistors (PDGFETs) show much stronger air-stable n-type behavior than nitrogen-doped double-layered graphene FETs (NDGFETs), even under an oxygen atmosphere, due to strong nucleophilicity, which may lead to real applications for air-stable n-type graphene channels.

Original language	English
Pages (from-to)	5481-5486
Number of pages	6
Journal	Advanced Materials
Volume	24
Issue number	40
DOIs	https://doi.org/10.1002/adma.201202255
State	Published - 23 Oct 2012

Keywords

Air stable n-type semiconducting channel
field-effect transistor
nucleophilicity
phosphorus
phosphorus doping

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10.1002/adma.201202255

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title = "Highly air-stable phosphorus-doped n-type graphene field-effect transistors",

abstract = "Phosphorus-doped double-layered graphene field-effect transistors (PDGFETs) show much stronger air-stable n-type behavior than nitrogen-doped double-layered graphene FETs (NDGFETs), even under an oxygen atmosphere, due to strong nucleophilicity, which may lead to real applications for air-stable n-type graphene channels.",

keywords = "Air stable n-type semiconducting channel, field-effect transistor, nucleophilicity, phosphorus, phosphorus doping",

author = "Surajit Some and Jangah Kim and Keunsik Lee and Atul Kulkarni and Yeoheung Yoon and Saemi Lee and Taesung Kim and Hyoyoung Lee",

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journal = "Advanced Materials",

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AU - Some, Surajit

AU - Kim, Jangah

AU - Lee, Keunsik

AU - Kulkarni, Atul

AU - Yoon, Yeoheung

AU - Lee, Saemi

AU - Kim, Taesung

AU - Lee, Hyoyoung

PY - 2012/10/23

Y1 - 2012/10/23

N2 - Phosphorus-doped double-layered graphene field-effect transistors (PDGFETs) show much stronger air-stable n-type behavior than nitrogen-doped double-layered graphene FETs (NDGFETs), even under an oxygen atmosphere, due to strong nucleophilicity, which may lead to real applications for air-stable n-type graphene channels.

AB - Phosphorus-doped double-layered graphene field-effect transistors (PDGFETs) show much stronger air-stable n-type behavior than nitrogen-doped double-layered graphene FETs (NDGFETs), even under an oxygen atmosphere, due to strong nucleophilicity, which may lead to real applications for air-stable n-type graphene channels.

KW - Air stable n-type semiconducting channel

KW - field-effect transistor

KW - nucleophilicity

KW - phosphorus

KW - phosphorus doping

UR - https://www.scopus.com/pages/publications/84867570689

U2 - 10.1002/adma.201202255

DO - 10.1002/adma.201202255

M3 - Article

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AN - SCOPUS:84867570689

SN - 0935-9648

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SP - 5481

EP - 5486

JO - Advanced Materials

JF - Advanced Materials

IS - 40

ER -

Highly air-stable phosphorus-doped n-type graphene field-effect transistors

Abstract

Keywords

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