High thermal responsiveness of a reduced graphene oxide field-effect transistor

Tran Quang Trung; Nguyen Thanh Tien; Doil Kim; Jin Heak Jung; Ok Ja Yoon; Nae Eung Lee

doi:10.1002/adma.201201724

High thermal responsiveness of a reduced graphene oxide field-effect transistor

Tran Quang Trung
, Nguyen Thanh Tien
, Doil Kim
, Jin Heak Jung
, Ok Ja Yoon
, Nae Eung Lee

Sungkyunkwan University

Research output: Contribution to journal › Article › peer-review

85 Scopus citations

Abstract

A reduced graphene oxide field-effect transistor (R-GO FET) device has a uniform self-assembled and networked channel of R-GO nanosheets that are highly responsive to physical stimuli such as temperature variations and infrared irradiation. The charge-transport mechanisms of the networked R-GO thin film include charge tunneling through the nanosheet junction and charge-hopping transport. Under a thermal or infrared (IR) stimulus, the charge carriers generated by thermal or IR activation contribute to changes in the charge transport inside the networked R-GO thin film.

Original language	English
Pages (from-to)	5254-5260
Number of pages	7
Journal	Advanced Materials
Volume	24
Issue number	38
DOIs	https://doi.org/10.1002/adma.201201724
State	Published - 2 Oct 2012
Externally published	Yes

Keywords

field-effect transistors
reduced graphene oxide
sensors
thermal responsiveness

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10.1002/adma.201201724

Cite this

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title = "High thermal responsiveness of a reduced graphene oxide field-effect transistor",

abstract = "A reduced graphene oxide field-effect transistor (R-GO FET) device has a uniform self-assembled and networked channel of R-GO nanosheets that are highly responsive to physical stimuli such as temperature variations and infrared irradiation. The charge-transport mechanisms of the networked R-GO thin film include charge tunneling through the nanosheet junction and charge-hopping transport. Under a thermal or infrared (IR) stimulus, the charge carriers generated by thermal or IR activation contribute to changes in the charge transport inside the networked R-GO thin film.",

keywords = "field-effect transistors, reduced graphene oxide, sensors, thermal responsiveness",

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doi = "10.1002/adma.201201724",

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AU - Trung, Tran Quang

AU - Tien, Nguyen Thanh

AU - Kim, Doil

AU - Jung, Jin Heak

AU - Yoon, Ok Ja

AU - Lee, Nae Eung

PY - 2012/10/2

Y1 - 2012/10/2

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AB - A reduced graphene oxide field-effect transistor (R-GO FET) device has a uniform self-assembled and networked channel of R-GO nanosheets that are highly responsive to physical stimuli such as temperature variations and infrared irradiation. The charge-transport mechanisms of the networked R-GO thin film include charge tunneling through the nanosheet junction and charge-hopping transport. Under a thermal or infrared (IR) stimulus, the charge carriers generated by thermal or IR activation contribute to changes in the charge transport inside the networked R-GO thin film.

KW - field-effect transistors

KW - reduced graphene oxide

KW - sensors

KW - thermal responsiveness

UR - https://www.scopus.com/pages/publications/84867089720

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JO - Advanced Materials

JF - Advanced Materials

IS - 38

ER -

High thermal responsiveness of a reduced graphene oxide field-effect transistor

Abstract

Keywords

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