High-temperature electrical behavior of a 2D multilayered MoS₂ transistor

This paper reports the high-temperature-dependent electrical behavior of a 2D multilayer MoS₂ transistor. The existence of a big Schottky barrier at the MoS₂-Ti junction can reduce carrier transport and lead to a lower transistor conductance. At a high temperature (380 K), the fieldeffect mobility of the multilayer MoS₂ transistor increases to 16.9 cm²V^-1sec^-1, which is 2 times higher than the value at room temperature. These results demonstrate that at high temperature, carrier transport in a MoS₂ with a high Schottky barrier is mainly affected by thermionic emission over the energy barrier.