High-Speed Current Switching of Inverted-Staggered Bottom-Gate a-IGZO-Based Thin-Film Transistors with Highly Stable Logic Circuit Operations

High-speed electronic (HSE) systems are an emerging technology with potential applications in various fields, including biomedical imaging devices, display systems, ultrasound detectors, and object recognition. This report presents a study on low-temperature processed inverted-staggered bottom-gate a-IGZO thin-film transistors (TFTs) for measuring fast current switching at higher frequencies. The IGZO TFT exhibits an excellent mobility of 10.51 cm²/(V·s) and a higher on/off ratio of 3.2 × 10⁵. Additionally, it displays highly stable and reliable gate-pulse switching at different frequencies ranging from 1 kHz to 0.2 MHz. Furthermore, logic operations such as inverter, NAND, and NOR gates were successfully performed using the enhancement-type device configuration. The results show stable and reliable voltage transfer responses with respect to the device configurations. Thus, this study not only enables the development of the applicability of the IGZO material in logic operations but also in HSE systems.