High-rate dry etching of ZnO in BCl3/CH4/H2 plasmas

Jeong Woon Bae; Chang Hyun Jeong; Han Ki Kim; Kyoung Kook Kim; Nam Gil Cho; Tae Yeon Seong; Seong Ju Park; Ilesanmi Adesida; Geun Young Yeom

doi:10.1143/jjap.42.l535

High-rate dry etching of ZnO in BCl₃/CH₄/H₂ plasmas

Jeong Woon Bae
, Chang Hyun Jeong
, Han Ki Kim
, Kyoung Kook Kim
, Nam Gil Cho
, Tae Yeon Seong
, Seong Ju Park
, Ilesanmi Adesida
, Geun Young Yeom

Department of Advanced Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

43 Scopus citations

Abstract

High-rate dry etching characteristics of aluminum-doped zinc oxide (AZO) have been investigated in inductively coupled plasma (ICP) using BCl₃/CH₄/H₂ plasma chemistry. Etch rates were measured as a function of BCl₃ flow rate in BCl₃/CH₄H₂ mixture and de-bias voltage. Measurement of etch rate, and etched sidewall profile were performed using a stylus profilometer and scanning electron microscopy, respectively. The highest AZO etch rate about 310 nm/min, could be obtained near 80% BCl₃ and at de-bias voltage of -350 V.

Original language	English
Pages (from-to)	L535-L537
Journal	Japanese Journal of Applied Physics
Volume	42
Issue number	5 B
DOIs	https://doi.org/10.1143/jjap.42.l535
State	Published - 15 May 2003

Keywords

AZO
BCl
Bias voltage
Etch profile
Inductively coupled plasma

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10.1143/jjap.42.l535

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title = "High-rate dry etching of ZnO in BCl3/CH4/H2 plasmas",

abstract = "High-rate dry etching characteristics of aluminum-doped zinc oxide (AZO) have been investigated in inductively coupled plasma (ICP) using BCl3/CH4/H2 plasma chemistry. Etch rates were measured as a function of BCl3 flow rate in BCl3/CH4H2 mixture and de-bias voltage. Measurement of etch rate, and etched sidewall profile were performed using a stylus profilometer and scanning electron microscopy, respectively. The highest AZO etch rate about 310 nm/min, could be obtained near 80\% BCl3 and at de-bias voltage of -350 V.",

keywords = "AZO, BCl, Bias voltage, Etch profile, Inductively coupled plasma",

author = "Bae, \{Jeong Woon\} and Jeong, \{Chang Hyun\} and Kim, \{Han Ki\} and Kim, \{Kyoung Kook\} and Cho, \{Nam Gil\} and Seong, \{Tae Yeon\} and Park, \{Seong Ju\} and Ilesanmi Adesida and Yeom, \{Geun Young\}",

year = "2003",

month = may,

day = "15",

doi = "10.1143/jjap.42.l535",

language = "English",

volume = "42",

pages = "L535--L537",

journal = "Japanese Journal of Applied Physics",

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publisher = "Institute of Physics",

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TY - JOUR

T1 - High-rate dry etching of ZnO in BCl3/CH4/H2 plasmas

AU - Bae, Jeong Woon

AU - Jeong, Chang Hyun

AU - Kim, Han Ki

AU - Kim, Kyoung Kook

AU - Cho, Nam Gil

AU - Seong, Tae Yeon

AU - Park, Seong Ju

AU - Adesida, Ilesanmi

AU - Yeom, Geun Young

PY - 2003/5/15

Y1 - 2003/5/15

N2 - High-rate dry etching characteristics of aluminum-doped zinc oxide (AZO) have been investigated in inductively coupled plasma (ICP) using BCl3/CH4/H2 plasma chemistry. Etch rates were measured as a function of BCl3 flow rate in BCl3/CH4H2 mixture and de-bias voltage. Measurement of etch rate, and etched sidewall profile were performed using a stylus profilometer and scanning electron microscopy, respectively. The highest AZO etch rate about 310 nm/min, could be obtained near 80% BCl3 and at de-bias voltage of -350 V.

AB - High-rate dry etching characteristics of aluminum-doped zinc oxide (AZO) have been investigated in inductively coupled plasma (ICP) using BCl3/CH4/H2 plasma chemistry. Etch rates were measured as a function of BCl3 flow rate in BCl3/CH4H2 mixture and de-bias voltage. Measurement of etch rate, and etched sidewall profile were performed using a stylus profilometer and scanning electron microscopy, respectively. The highest AZO etch rate about 310 nm/min, could be obtained near 80% BCl3 and at de-bias voltage of -350 V.

KW - AZO

KW - BCl

KW - Bias voltage

KW - Etch profile

KW - Inductively coupled plasma

UR - https://www.scopus.com/pages/publications/0038380688

U2 - 10.1143/jjap.42.l535

DO - 10.1143/jjap.42.l535

M3 - Article

AN - SCOPUS:0038380688

SN - 0021-4922

VL - 42

SP - L535-L537

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 5 B

ER -

High-rate dry etching of ZnO in BCl₃/CH₄/H₂ plasmas

Abstract

Keywords

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