High quality Ta2O5 gate dielectrics with Tox,eq < 10 angstrom
- H. F. Luan
- , S. J. Lee
- , C. H. Lee
- , S. C. Song
- , Y. L. Mao
- , Y. Senzaki
- , D. Roberts
- , D. L. Kwong
Research output: Contribution to journal › Conference article › peer-review
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