High quality Ta2O5 gate dielectrics with Tox,eq < 10 angstrom

H. F. Luan; S. J. Lee; C. H. Lee; S. C. Song; Y. L. Mao; Y. Senzaki; D. Roberts; D. L. Kwong

High quality Ta₂O₅ gate dielectrics with T_ox,eq < 10 angstrom

H. F. Luan
, S. J. Lee
, C. H. Lee
, S. C. Song
, Y. L. Mao
, Y. Senzaki
, D. Roberts
, D. L. Kwong

University of Texas at Austin

Research output: Contribution to journal › Conference article › peer-review

31 Scopus citations

Abstract

High quality Ta₂O₅ gate stack with T_ox,eq =9 angstrom (measured Vg=-2.5V in strong accumulation without taking quantum mechanical effects into account) and the leakage current Jg=-0.19 A/cm² Vg=-1.0V has been achieved using NH₃-based interface layer, H₂/O₂ post-deposition anneal and TiN diffusion barrier. The leakage current of Ta₂O₅ gate stack with NO interface layer is 10⁴ × lower than that of RTP SiO₂ with same T_ox,eq and can be further reduced by a factor of 100 with NH₃-based interface layer.

Original language	English
Pages (from-to)	141-144
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
State	Published - 1999
Externally published	Yes
Event	1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA Duration: 5 Dec 1999 → 8 Dec 1999

Cite this

@article{b030098cfe8848d4937588fd7937d5ad,

title = "High quality Ta2O5 gate dielectrics with Tox,eq < 10 angstrom",

abstract = "High quality Ta2O5 gate stack with Tox,eq =9 angstrom (measured Vg=-2.5V in strong accumulation without taking quantum mechanical effects into account) and the leakage current Jg=-0.19 A/cm2 Vg=-1.0V has been achieved using NH3-based interface layer, H2/O2 post-deposition anneal and TiN diffusion barrier. The leakage current of Ta2O5 gate stack with NO interface layer is 104 × lower than that of RTP SiO2 with same Tox,eq and can be further reduced by a factor of 100 with NH3-based interface layer.",

author = "Luan, \{H. F.\} and Lee, \{S. J.\} and Lee, \{C. H.\} and Song, \{S. C.\} and Mao, \{Y. L.\} and Y. Senzaki and D. Roberts and Kwong, \{D. L.\}",

year = "1999",

language = "English",

pages = "141--144",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "1999 IEEE International Devices Meeting (IEDM) ; Conference date: 05-12-1999 Through 08-12-1999",

}

TY - JOUR

T1 - High quality Ta2O5 gate dielectrics with Tox,eq < 10 angstrom

AU - Luan, H. F.

AU - Lee, S. J.

AU - Lee, C. H.

AU - Song, S. C.

AU - Mao, Y. L.

AU - Senzaki, Y.

AU - Roberts, D.

AU - Kwong, D. L.

PY - 1999

Y1 - 1999

N2 - High quality Ta2O5 gate stack with Tox,eq =9 angstrom (measured Vg=-2.5V in strong accumulation without taking quantum mechanical effects into account) and the leakage current Jg=-0.19 A/cm2 Vg=-1.0V has been achieved using NH3-based interface layer, H2/O2 post-deposition anneal and TiN diffusion barrier. The leakage current of Ta2O5 gate stack with NO interface layer is 104 × lower than that of RTP SiO2 with same Tox,eq and can be further reduced by a factor of 100 with NH3-based interface layer.

AB - High quality Ta2O5 gate stack with Tox,eq =9 angstrom (measured Vg=-2.5V in strong accumulation without taking quantum mechanical effects into account) and the leakage current Jg=-0.19 A/cm2 Vg=-1.0V has been achieved using NH3-based interface layer, H2/O2 post-deposition anneal and TiN diffusion barrier. The leakage current of Ta2O5 gate stack with NO interface layer is 104 × lower than that of RTP SiO2 with same Tox,eq and can be further reduced by a factor of 100 with NH3-based interface layer.

UR - https://www.scopus.com/pages/publications/0033307456

M3 - Conference article

AN - SCOPUS:0033307456

SN - 0163-1918

SP - 141

EP - 144

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - 1999 IEEE International Devices Meeting (IEDM)

Y2 - 5 December 1999 through 8 December 1999

ER -

High quality Ta₂O₅ gate dielectrics with T_ox,eq < 10 angstrom

Abstract

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