High photoresponsivity of multilayer MoSe₂ phototransistors decorated with Au nanoseeds

In this paper, we report the fabrication and photoresponsive characteristics of MoSe₂ phototransistors decorated with Au nanoseeds. The Au nanoseeds were excellently deposited onto the MoSe₂ phototransistors by electron-beam evaporation with an extremely low deposition rate. This simple but effective method improved the photoresponsivity of the MoSe₂ phototransistor by 276% compared to that of a pristine MoSe₂ phototransistor, owing to the surface plasmon resonance effect of the Au nanoseeds. The results reveal that this method can provide a promising route for achieving high-performance photosensors.