High performance vertical tunneling diodes using graphene/hexagonal boron nitride/graphene hetero-structure

Seung Hwan Lee; Min Sup Choi; Jia Lee; Chang Ho Ra; Xiaochi Liu; Euyheon Hwang; Jun Hee Choi; Jianqiang Zhong; Wei Chen; Won Jong Yoo

doi:10.1063/1.4863840

High performance vertical tunneling diodes using graphene/hexagonal boron nitride/graphene hetero-structure

Seung Hwan Lee, Min Sup Choi, Jia Lee, Chang Ho Ra, Xiaochi Liu, Euyheon Hwang, Jun Hee Choi, Jianqiang Zhong, Wei Chen, Won Jong Yoo

SKKU Advanced Institute of Nano Technology (SAINT)

Research output: Contribution to journal › Article › peer-review

41 Scopus citations

Abstract

A tunneling rectifier prepared from vertically stacked two-dimensional (2D) materials composed of chemically doped graphene electrodes and hexagonal boron nitride (h-BN) tunneling barrier was demonstrated. The asymmetric chemical doping to graphene with linear dispersion property induces rectifying behavior effectively, by facilitating Fowler-Nordheim tunneling at high forward biases. It results in excellent diode performances of a hetero-structured graphene/h-BN/graphene tunneling diode, with an asymmetric factor exceeding 1000, a nonlinearity of ∼40, and a peak sensitivity of ∼12V ^-1, which are superior to contending metal-insulator-metal diodes, showing great potential for future flexible and transparent electronic devices.

Original language	English
Article number	053103
Journal	Applied Physics Letters
Volume	104
Issue number	5
DOIs	https://doi.org/10.1063/1.4863840
State	Published - 3 Feb 2014

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title = "High performance vertical tunneling diodes using graphene/hexagonal boron nitride/graphene hetero-structure",

abstract = "A tunneling rectifier prepared from vertically stacked two-dimensional (2D) materials composed of chemically doped graphene electrodes and hexagonal boron nitride (h-BN) tunneling barrier was demonstrated. The asymmetric chemical doping to graphene with linear dispersion property induces rectifying behavior effectively, by facilitating Fowler-Nordheim tunneling at high forward biases. It results in excellent diode performances of a hetero-structured graphene/h-BN/graphene tunneling diode, with an asymmetric factor exceeding 1000, a nonlinearity of ∼40, and a peak sensitivity of ∼12V -1, which are superior to contending metal-insulator-metal diodes, showing great potential for future flexible and transparent electronic devices.",

author = "Lee, \{Seung Hwan\} and Choi, \{Min Sup\} and Jia Lee and \{Ho Ra\}, Chang and Xiaochi Liu and Euyheon Hwang and Choi, \{Jun Hee\} and Jianqiang Zhong and Wei Chen and Yoo, \{Won Jong\}",

year = "2014",

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doi = "10.1063/1.4863840",

language = "English",

volume = "104",

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T1 - High performance vertical tunneling diodes using graphene/hexagonal boron nitride/graphene hetero-structure

AU - Lee, Seung Hwan

AU - Choi, Min Sup

AU - Lee, Jia

AU - Ho Ra, Chang

AU - Liu, Xiaochi

AU - Hwang, Euyheon

AU - Choi, Jun Hee

AU - Zhong, Jianqiang

AU - Chen, Wei

AU - Yoo, Won Jong

PY - 2014/2/3

Y1 - 2014/2/3

N2 - A tunneling rectifier prepared from vertically stacked two-dimensional (2D) materials composed of chemically doped graphene electrodes and hexagonal boron nitride (h-BN) tunneling barrier was demonstrated. The asymmetric chemical doping to graphene with linear dispersion property induces rectifying behavior effectively, by facilitating Fowler-Nordheim tunneling at high forward biases. It results in excellent diode performances of a hetero-structured graphene/h-BN/graphene tunneling diode, with an asymmetric factor exceeding 1000, a nonlinearity of ∼40, and a peak sensitivity of ∼12V -1, which are superior to contending metal-insulator-metal diodes, showing great potential for future flexible and transparent electronic devices.

AB - A tunneling rectifier prepared from vertically stacked two-dimensional (2D) materials composed of chemically doped graphene electrodes and hexagonal boron nitride (h-BN) tunneling barrier was demonstrated. The asymmetric chemical doping to graphene with linear dispersion property induces rectifying behavior effectively, by facilitating Fowler-Nordheim tunneling at high forward biases. It results in excellent diode performances of a hetero-structured graphene/h-BN/graphene tunneling diode, with an asymmetric factor exceeding 1000, a nonlinearity of ∼40, and a peak sensitivity of ∼12V -1, which are superior to contending metal-insulator-metal diodes, showing great potential for future flexible and transparent electronic devices.

UR - https://www.scopus.com/pages/publications/84899887948

U2 - 10.1063/1.4863840

DO - 10.1063/1.4863840

M3 - Article

AN - SCOPUS:84899887948

SN - 0003-6951

VL - 104

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

M1 - 053103

ER -

High performance vertical tunneling diodes using graphene/hexagonal boron nitride/graphene hetero-structure

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