High performance pentacene TFTs with a solution processed PMMA/AIZrOx gate dielectric

  • Kyung Mo Jung
  • , Jongsu Oh
  • , Jae Moon Kim
  • , Kee Chan Park
  • , Jae Hong Jeon
  • , Yong Sang Kim

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Organic thin film transistors (OTFTs) with a solution processed hybrid gate dielectric made of PMMA/AIZrOx (ϵr=9.2) were demonstrated. The optimized OTFTs show high output current, low threshold voltage (∼ -4.4 V), and reliable leakage characteristics due to the advantages of each gate dielectric material.

Original languageEnglish
Title of host publication25th International Display Workshops, IDW 2018
PublisherInternational Display Workshops
Pages386-388
Number of pages3
ISBN (Electronic)9781510883918
StatePublished - 2018
Event25th International Display Workshops, IDW 2018 - Nagoya, Japan
Duration: 12 Dec 201814 Dec 2018

Publication series

NameProceedings of the International Display Workshops
Volume1
ISSN (Print)1883-2490

Conference

Conference25th International Display Workshops, IDW 2018
Country/TerritoryJapan
CityNagoya
Period12/12/1814/12/18

Keywords

  • High k
  • Hybrid gate dielectric
  • Pentacene
  • Thin film transistors
  • Threshold voltage

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