Abstract
To develop high performance p-type electronic materials, we have investigated about high mobility metal halide semiconductors, such as CuI and CsSnI3. The facile Cu and I vacancy generations in CuI hinder the proper control of electrical properties of CuI. We have developed the mild processing of CuI with solution precursor, which enabled high performance thin-film transistor (mobility ~2 cm2/Vs) and high electrical conductivity ( > 500 S/cm). Moreover, the optimized CsSnI3 TFT exhibit field-effect hole mobility of over 50 cm2/Vs and on/off current ratios exceeding 108, as well as high operational stability and reproducibility.
| Original language | English |
|---|---|
| Pages (from-to) | 573-575 |
| Number of pages | 3 |
| Journal | Digest of Technical Papers - SID International Symposium |
| Volume | 54 |
| Issue number | 1 |
| DOIs | |
| State | Published - 2023 |
| Event | SID International Symposium Digest of Technical Papers, 2023 - Los Angeles, United States Duration: 21 May 2023 → 26 May 2023 |
Keywords
- CuI
- halide perovskite
- p-type TFT