High-Performance Field-Effect Transistors and Phototransistors Array Based on Solution-Processed Quasi-1D Van der Waals Ta₂Pd₃S₈ Crystals

Quasi-1D van der Waals (vdW) materials, particularly the M₂N₃X₈ family, have emerged as promising candidates for nanoelectronic platforms due to their excellent carrier transport properties and structural diversity. Among these, Ta₂Pd₃S₈, a theoretically proposed member, has remained unexplored. In this study, Ta₂Pd₃S₈ is successfully synthesized for the first time and optimize its exfoliation into nanowires through liquid phase exfoliation, achieving scalable production using a liquid cascade centrifugation technique. Two types of field-effect transistors (FET) devices are fabricated: single nanowire devices and network structure arrays. The single nanowire FETs demonstrate high field-effect mobility of up to 27.3 cm² V⁻¹ s⁻¹ with an I_on/I_off of 4.31 × 10⁴, while the network devices exhibit uniform performance across 5 × 5 arrays. Furthermore, optoelectronic characterization reveals excellent photodetection capabilities, including a responsivity of 322.40 A W⁻¹ for single nanowire devices and 1.85 mA W⁻¹ for network structures. These results highlight the potential of Ta₂Pd₃S₈ as a versatile material for low-dimensional electronic and optoelectronic applications, paving the way for its integration into next-generation multifunctional devices.