High-Mobility CdSe Thin-Film Transistors and Circuits by Sol-gel Method

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Abstract

We exploit large-area and high-performance solution-processed CdSe thin-film transistors (TFTs) and 7-stage ring oscillators. A CdSe thin-film was successfully demonstrated using relative low temperature (<400 ഒ) sol-gel processing via organoselenide and cadmium precursors. A CdSe thin-film from commercial organic solvent process was used for active layer of thin-film transistors and integrated circuits which demonstrate electron saturation mobilities exceeding 152 cm2/V-s and frequency of 1 MHz in 7-stage ring oscillators on borosilicate glass substrates.

Original languageEnglish
Pages (from-to)1350-1352
Number of pages3
JournalDigest of Technical Papers - SID International Symposium
Volume48
Issue number1
DOIs
StatePublished - 2017
Externally publishedYes
EventSID Symposium, Seminar, and Exhibition 2017, Display Week 2017 - Los Angeles, United States
Duration: 21 May 201726 May 2017

Keywords

  • Cadmium selenide
  • High-mobility
  • Metal chalcogenide
  • Solution-processing
  • Thin-film transistors

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