Abstract
We exploit large-area and high-performance solution-processed CdSe thin-film transistors (TFTs) and 7-stage ring oscillators. A CdSe thin-film was successfully demonstrated using relative low temperature (<400 ഒ) sol-gel processing via organoselenide and cadmium precursors. A CdSe thin-film from commercial organic solvent process was used for active layer of thin-film transistors and integrated circuits which demonstrate electron saturation mobilities exceeding 152 cm2/V-s and frequency of 1 MHz in 7-stage ring oscillators on borosilicate glass substrates.
| Original language | English |
|---|---|
| Pages (from-to) | 1350-1352 |
| Number of pages | 3 |
| Journal | Digest of Technical Papers - SID International Symposium |
| Volume | 48 |
| Issue number | 1 |
| DOIs | |
| State | Published - 2017 |
| Externally published | Yes |
| Event | SID Symposium, Seminar, and Exhibition 2017, Display Week 2017 - Los Angeles, United States Duration: 21 May 2017 → 26 May 2017 |
Keywords
- Cadmium selenide
- High-mobility
- Metal chalcogenide
- Solution-processing
- Thin-film transistors