High-mobility 2D layered semiconducting transistors based on large-area and highly crystalline CVD-grown MoSe2 for flexible electronics

Seongin Hong; Seung Min Kim; Won Geun Song; Youngki Hong; Sunkook Kim

doi:10.1109/SNW.2016.7577983

High-mobility 2D layered semiconducting transistors based on large-area and highly crystalline CVD-grown MoSe₂ for flexible electronics

Seongin Hong, Seung Min Kim, Won Geun Song, Youngki Hong, Sunkook Kim

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

Layered semiconductor materials of molecular thickness, in particular transition metal dichacholgenides (TMDs), possess desirable characteristics including the existence of bandgap, low-power switching behavior, and high carrier mobility that afford them promising as active components of future high speed and low-power electronics[1-3]. Reliable large-volume production of 2D layered semiconductors is an essential step for translating their intriguing properties into applications. Although atomically thin flakes of 2D layered TMD such as MoS₂ can be peeled from bulk crystals by micromechanical exfoliation, this method is not integrated in large-volume and does not allow systematic control of thickness and size of 2D layered semiconductors. Hence, the growth of large-area MoS₂ is one of the critical challenges to realize its promising potential.[4]

Original language	English
Title of host publication	2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	56-57
Number of pages	2
ISBN (Electronic)	9781509007264
DOIs	https://doi.org/10.1109/SNW.2016.7577983
State	Published - 27 Sep 2016
Externally published	Yes
Event	21st IEEE Silicon Nanoelectronics Workshop, SNW 2016 - Honolulu, United States Duration: 12 Jun 2016 → 13 Jun 2016

Publication series

Name	2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016

Conference

Conference	21st IEEE Silicon Nanoelectronics Workshop, SNW 2016
Country/Territory	United States
City	Honolulu
Period	12/06/16 → 13/06/16

Access to Document

10.1109/SNW.2016.7577983

Cite this

Hong, S., Kim, S. M., Song, W. G., Hong, Y., & Kim, S. (2016). High-mobility 2D layered semiconducting transistors based on large-area and highly crystalline CVD-grown MoSe₂ for flexible electronics. In 2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016 (pp. 56-57). Article 7577983 (2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SNW.2016.7577983

Hong, Seongin ; Kim, Seung Min ; Song, Won Geun et al. / High-mobility 2D layered semiconducting transistors based on large-area and highly crystalline CVD-grown MoSe₂ for flexible electronics. 2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 56-57 (2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016).

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title = "High-mobility 2D layered semiconducting transistors based on large-area and highly crystalline CVD-grown MoSe2 for flexible electronics",

abstract = "Layered semiconductor materials of molecular thickness, in particular transition metal dichacholgenides (TMDs), possess desirable characteristics including the existence of bandgap, low-power switching behavior, and high carrier mobility that afford them promising as active components of future high speed and low-power electronics[1-3]. Reliable large-volume production of 2D layered semiconductors is an essential step for translating their intriguing properties into applications. Although atomically thin flakes of 2D layered TMD such as MoS2 can be peeled from bulk crystals by micromechanical exfoliation, this method is not integrated in large-volume and does not allow systematic control of thickness and size of 2D layered semiconductors. Hence, the growth of large-area MoS2 is one of the critical challenges to realize its promising potential.[4]",

author = "Seongin Hong and Kim, \{Seung Min\} and Song, \{Won Geun\} and Youngki Hong and Sunkook Kim",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 21st IEEE Silicon Nanoelectronics Workshop, SNW 2016 ; Conference date: 12-06-2016 Through 13-06-2016",

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language = "English",

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Hong, S, Kim, SM, Song, WG, Hong, Y & Kim, S 2016, High-mobility 2D layered semiconducting transistors based on large-area and highly crystalline CVD-grown MoSe₂ for flexible electronics. in 2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016., 7577983, 2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016, Institute of Electrical and Electronics Engineers Inc., pp. 56-57, 21st IEEE Silicon Nanoelectronics Workshop, SNW 2016, Honolulu, United States, 12/06/16. https://doi.org/10.1109/SNW.2016.7577983

High-mobility 2D layered semiconducting transistors based on large-area and highly crystalline CVD-grown MoSe₂ for flexible electronics. / Hong, Seongin; Kim, Seung Min; Song, Won Geun et al.
2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 56-57 7577983 (2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Kim, Sunkook

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N2 - Layered semiconductor materials of molecular thickness, in particular transition metal dichacholgenides (TMDs), possess desirable characteristics including the existence of bandgap, low-power switching behavior, and high carrier mobility that afford them promising as active components of future high speed and low-power electronics[1-3]. Reliable large-volume production of 2D layered semiconductors is an essential step for translating their intriguing properties into applications. Although atomically thin flakes of 2D layered TMD such as MoS2 can be peeled from bulk crystals by micromechanical exfoliation, this method is not integrated in large-volume and does not allow systematic control of thickness and size of 2D layered semiconductors. Hence, the growth of large-area MoS2 is one of the critical challenges to realize its promising potential.[4]

AB - Layered semiconductor materials of molecular thickness, in particular transition metal dichacholgenides (TMDs), possess desirable characteristics including the existence of bandgap, low-power switching behavior, and high carrier mobility that afford them promising as active components of future high speed and low-power electronics[1-3]. Reliable large-volume production of 2D layered semiconductors is an essential step for translating their intriguing properties into applications. Although atomically thin flakes of 2D layered TMD such as MoS2 can be peeled from bulk crystals by micromechanical exfoliation, this method is not integrated in large-volume and does not allow systematic control of thickness and size of 2D layered semiconductors. Hence, the growth of large-area MoS2 is one of the critical challenges to realize its promising potential.[4]

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Hong S, Kim SM, Song WG, Hong Y, Kim S. High-mobility 2D layered semiconducting transistors based on large-area and highly crystalline CVD-grown MoSe₂ for flexible electronics. In 2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016. Institute of Electrical and Electronics Engineers Inc. 2016. p. 56-57. 7577983. (2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016). doi: 10.1109/SNW.2016.7577983